Aiguo He , Shuwei Tang , Fayun Tang , Wei Long , Zengzhe Xi , Weiguo Liu
{"title":"铅(Mg1/3Nb2/3)O3-铅(Zn1/3Nb2/3)O3 单晶的相组成、弛豫行为和应变性能","authors":"Aiguo He , Shuwei Tang , Fayun Tang , Wei Long , Zengzhe Xi , Weiguo Liu","doi":"10.1016/j.mseb.2024.117796","DOIUrl":null,"url":null,"abstract":"<div><div>For exploiting relaxor materials with high strain and low hysteresis, Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>– Pb(Zn<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> (PMN-PZN) crystal was designed and grown. The grown crystal is light yellow with a maximum size of 13 × 10 × 8 mm<sup>3</sup>. Rietveld refinement and domain configuration at room temperature confirm the coexistence of cubic and rhombohedral phases, and the cubic phase is dominant. The Curie temperature of the grown crystal is slightly lower than room temperature and shows a strong frequency dependence. Strong dielectric relaxor performance is demonstrated by means of different ways. At a temperature of 26 ℃ and an electric field of 35 kV/cm, the saturation polarization reaches 22.62 μC/cm<sup>2</sup>, the residual polarization is almost zero, the strain is about 0.1 %, and the hysteresis degree is 4 ∼ 5 %. Moderate strain and low hysteresis make PMN-PZN crystal display potential application in high-precision actuators. Moreover, in-situ domain evolution under an electric field was observed to understand the polarization and strain behaviors.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"311 ","pages":"Article 117796"},"PeriodicalIF":3.9000,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The phase composition, relaxor behavior and strain performance of the Pb(Mg1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3 single crystal\",\"authors\":\"Aiguo He , Shuwei Tang , Fayun Tang , Wei Long , Zengzhe Xi , Weiguo Liu\",\"doi\":\"10.1016/j.mseb.2024.117796\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>For exploiting relaxor materials with high strain and low hysteresis, Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>– Pb(Zn<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> (PMN-PZN) crystal was designed and grown. The grown crystal is light yellow with a maximum size of 13 × 10 × 8 mm<sup>3</sup>. Rietveld refinement and domain configuration at room temperature confirm the coexistence of cubic and rhombohedral phases, and the cubic phase is dominant. The Curie temperature of the grown crystal is slightly lower than room temperature and shows a strong frequency dependence. Strong dielectric relaxor performance is demonstrated by means of different ways. At a temperature of 26 ℃ and an electric field of 35 kV/cm, the saturation polarization reaches 22.62 μC/cm<sup>2</sup>, the residual polarization is almost zero, the strain is about 0.1 %, and the hysteresis degree is 4 ∼ 5 %. Moderate strain and low hysteresis make PMN-PZN crystal display potential application in high-precision actuators. Moreover, in-situ domain evolution under an electric field was observed to understand the polarization and strain behaviors.</div></div>\",\"PeriodicalId\":18233,\"journal\":{\"name\":\"Materials Science and Engineering B-advanced Functional Solid-state Materials\",\"volume\":\"311 \",\"pages\":\"Article 117796\"},\"PeriodicalIF\":3.9000,\"publicationDate\":\"2024-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science and Engineering B-advanced Functional Solid-state Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921510724006251\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering B-advanced Functional Solid-state Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510724006251","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
The phase composition, relaxor behavior and strain performance of the Pb(Mg1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3 single crystal
For exploiting relaxor materials with high strain and low hysteresis, Pb(Mg1/3Nb2/3)O3– Pb(Zn1/3Nb2/3)O3 (PMN-PZN) crystal was designed and grown. The grown crystal is light yellow with a maximum size of 13 × 10 × 8 mm3. Rietveld refinement and domain configuration at room temperature confirm the coexistence of cubic and rhombohedral phases, and the cubic phase is dominant. The Curie temperature of the grown crystal is slightly lower than room temperature and shows a strong frequency dependence. Strong dielectric relaxor performance is demonstrated by means of different ways. At a temperature of 26 ℃ and an electric field of 35 kV/cm, the saturation polarization reaches 22.62 μC/cm2, the residual polarization is almost zero, the strain is about 0.1 %, and the hysteresis degree is 4 ∼ 5 %. Moderate strain and low hysteresis make PMN-PZN crystal display potential application in high-precision actuators. Moreover, in-situ domain evolution under an electric field was observed to understand the polarization and strain behaviors.
期刊介绍:
The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.