采用双偏压模式实现近阈值调节的高效电流数字辅助模拟 LDO

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-11-05 DOI:10.1109/JSSC.2024.3486609
Yajun Lin;Hing Tai Chen;Xun Liu;Ka Nang Leung
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引用次数: 0

摘要

提出了一种具有低静态电流和宽负载电流范围的数字辅助模拟低差稳压器(DA-ALDO)。所提出的LDO主要由基于信号电流增强器的放大器和数字瞬态增强器组成。提出了一种模式控制器来实现双偏置模式的操作。它的目的是检测电源电压的大小,将其分为两类,并确定偏置模式。利用所提出的自适应偏置电流和电压,LDO能够在电路板供电域正常工作,从1.2 V的正常供电电压到0.5 V的近阈值电压。所提出的DA-ALDO采用65纳米CMOS工艺制造。芯片面积为0.0134 mm2,片上总电容为2.6 pF,最小电源电压为0.5 V,最小压降电压为20 mV。最大负载电流为940ma,静态电流范围为5 ~ $44~{\mu}$ A。在1.2 v电源下,当输出电流在400ns内从${\lt} 26~{\mu}$ A增加到$ 940ma时,输出处的过调量和过调量分别为75 mV和77 mV。
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A High-Current-Efficiency Digital-Assisted Analog LDO With Dual-Biasing Mode for Near-Threshold Regulation
A digital-assisted analog low-dropout regulator (DA-ALDO), with low quiescent current and wide-range load current, is proposed. The proposed LDO is mainly constructed by a signal-current-enhancer-based amplifier, together with a digital transient enhancer. A mode controller is proposed to enable an operation with dual-biasing mode. It is designed to detect the magnitude of the supply voltage, classify it into two categories, and decide the biasing mode. With the proposed adaptive bias current and voltage adaptively, the LDO is capable of functioning properly with a board supply domain, from the normal supply voltage of 1.2 V to the near-threshold voltage of 0.5 V. The proposed DA-ALDO is fabricated in a 65-nm CMOS process. The chip area is 0.0134 mm2 and the total on-chip capacitance is 2.6 pF. The minimum supply and dropout voltage are 0.5 V and 20 mV, respectively. The maximum load current is 940 mA, and the range of quiescent current is 5– $44~{\mu }$ A. At 1.2-V supply, the measured undershoot and overshoot at the output are 75 and 77 mV, respectively, when the output current increases from ${\lt } 26~{\mu }$ A to 940 mA in 400 ns.
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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