28 纳米 FD-SOI CMOS 中用于关键字定位应用的低于 400-nW 的实时事件驱动频谱提取装置

IF 4.6 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-11-08 DOI:10.1109/jssc.2024.3475948

Soufiane Mourrane, Benoit Larras, Sylvain Clerc, Andreia Cathelin, Antoine Frappé

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A Sub-400-nW Real-Time Event-Driven Spectrogram Extraction Unit in 28-nm FD-SOI CMOS for Keyword Spotting Application

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来源期刊

IEEE Journal of Solid-state Circuits 工程技术-工程：电子与电气

CiteScore

11.00

自引率

20.40%

发文量

351

审稿时长

3-6 weeks

期刊介绍： The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.

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