Wen Qiao, Xinzhuo Zhang, Shiming Yan, Ru Bai and Tiejun Zhou
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引用次数: 0
摘要
构建半导体范德华(vdW)异质结构已成为提高光催化剂水分离性能的一种有前途的方法。本研究设计了一种 PtS2/HfGe2N4 vdW 异质结,并利用第一原理计算研究了它的光催化性能。结果表明,异质结具有很强的光吸收能力,并具有 II 型带排列特征。异质结内部的电荷转移产生了内部电场,使其能够直接作为 Z 型光催化剂发挥作用。此外,其合适的带边位置也有利于水分离所需的氧化还原反应。值得注意的是,异质结在 2.3 eV 处(对应可见光谱中的绿光)显示出 3.8 × 105 cm-1 的高强度光吸收系数,突出了异质结在光催化水分离应用方面的潜力。
A direct Z-scheme photocatalyst PtS2/HfGe2N4 van der Waals heterostructure for highly efficient water splitting: first-principles study†
The construction of semiconductor van der Waals (vdW) heterostructures has emerged as a promising approach to enhance the performance of photocatalysts for water splitting. In this study, a PtS2/HfGe2N4 vdW heterojunction was designed, and its photocatalytic properties were investigated using first-principles calculations. The results indicate that the heterojunction exhibits strong light absorption and features a type-II band alignment. Charge transfer within the heterojunction creates an internal electric field, enabling its action as a direct Z-scheme photocatalyst. Additionally, its well-suited band edge position facilitates the redox reactions required for water splitting. Notably, the heterojunction demonstrates a high-intensity light absorption coefficient of 3.8 × 105 cm−1 at 2.3 eV corresponding to the green light in the visible spectrum, highlighting the heterojunction's potential for photocatalytic water splitting applications.