Zhongtao Cui;Xuesong Yuan;Xiaotao Xu;Dongrui Chen;Yifan Zu;Matthew Thomas Cole;Qingyun Chen;Yang Yan
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引用次数: 0
摘要
本文研究了一种用于毫米波和太赫兹放大源的行波扩展交互放大器。与传统的行波管结构相比，通过在行波结构之间放置工程扩展相互作用空腔，以更短的高频电路获得更高的增益。与扩展交互 klystrons 相比，该设备的带宽显著增加。我们设计了一个 26 毫米长的 D 波段束波交互电路。在 21.5 kV 工作电压、0.3 A 束电流和 5 mW 输入功率条件下进行的粒子内电池模拟显示，最大输出功率达到 351 W，增益为 48.4 dB，3 dB 带宽为 1.42 GHz。
Theoretical Research on a D-Band Traveling Wave Extended Interaction Amplifier
A traveling-wave, extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources. By placing engineered extended interaction cavities between the traveling wave structures, higher gain is obtained with a shorter high frequency circuit, compared with conventional traveling wave tubes architectures. The bandwidth of the device is significantly increased relative to extended interaction klystrons. A D-band beam wave interaction circuit of 26 mm long has been designed. Particle-in-cell simulations at 21.5-kV operating voltage, 0.3-A beam current, and 5-mW input power show that the maximum output power reaches 351 W, with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.
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