通过基底表面化学操纵锰矿薄膜的界面磁性

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-11-13 DOI:10.1021/acs.jpcc.4c05014
Purnima P. Balakrishnan, Qinwen Lu, Qing Wang, Shin Muramoto, Paige Quarterman, Michael R. Fitzsimmons, Timothy R. Charlton, Xiaofang Zhai, Alexander J. Grutter
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引用次数: 0

摘要

我们展示了复合氧化物薄膜膜的磁性能与基底的意外关系。虽然复合氧化物的可调磁性对许多应用都很有吸引力,但长期以来,设备集成一直受到高质量薄膜生长所需的严格基底要求的限制。最近,水溶性牺牲层被用来在氧化物薄膜生长后将其与基底分离,使界面上的结构自由度和化学自由度分离。这种方法有望实现与以前不兼容的材料平台的整合,但对转移薄膜的界面研究仍然有限。在这项工作中,我们使用偏振中子反射仪和二次离子质谱详细了解了 LaMnO3 膜随深度变化的化学和磁化。我们发现,最终基底在转移 LaMnO3 薄膜表面吸收或排除氢物种方面起着关键作用,从而改变了这些界面区域的磁性。尽管消除了外延关系,但基底的选择会在意想不到的程度上影响转移膜内的磁性,这对集成到现有硅基技术中具有重要意义。
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Manipulating Interface Magnetism in Manganite Thin Film Membranes by Substrate Surface Chemistry
We demonstrate an unexpected substrate dependence of the magnetic properties of complex oxide thin film membranes. While the tunable magnetism of complex oxides is attractive for many applications, device integration has long been limited by the strict substrate requirements necessary for high-quality film growth. Recently, water-soluble sacrificial layers have been used to separate oxide thin films from the substrate after growth, decoupling the structural and chemical degrees of freedom at the interface. This approach is hoped to enable integration with previously incompatible material platforms, but interface studies of transferred films remain limited. In this work, we use polarized neutron reflectometry and secondary ion mass spectroscopy to provide a detailed understanding of depth-dependent chemistry and magnetization of LaMnO3 membranes. We find that the final substrate plays a key role in either incorporating or excluding hydrogen species at the surfaces of transferred LaMnO3 thin films, modifying the magnetism in these interfacial regions. Despite elimination of the epitaxial relationship, the choice of substrate influences the magnetism within the transferred membranes to an unexpected degree, with important implications for integration into existing silicon-based technologies.
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CiteScore
7.20
自引率
4.30%
发文量
567
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