Floquet engineering of anomalous Hall effects in monolayer MoS2

Light-matter interactions have emerged as a new research focus recently offering promises of unveiling novel physics and leading to applications under nonequilibrium conditions. The quantized Hall conductivities predicted by Floquet theory assuming a Fermi-Dirac distribution however deviate from experimental observations. To resolve these puzzles, we consider the effect of nonequilibrium electron occupation to study the anomalous, valley, and spin Hall effects of a prototype monolayer transition metal dichalcogenide MoS₂. We find that spin Hall conductivity can be effectively suppressed approaching zero value by linearly polarized light under near resonant excitations. In contrast, it is substantially enhanced by circularly polarized light, originating from optical selection rules and topological phase transitions. Besides, the quantized anomalous Hall conductivity is much reduced if nonequilibrium occupations of Floquet bands are considered. Our study provides a novel avenue for engineering various Hall effects in two-dimensional materials using light, holding great promises for future device applications.