{"title":"基于 Ga2O3/Nb:SrTiO3 异质结的界面记忆晶体管的突触特性","authors":"Youhong Wang, Wei Hu*, Kaijin Kang, Caili Dong and Xiaosheng Tang*, ","doi":"10.1021/acs.jpclett.4c0254810.1021/acs.jpclett.4c02548","DOIUrl":null,"url":null,"abstract":"<p >Memristors have been extensively studied for tremendous potential for future neuromorphic computing hardware applications because of their ability to imitate biological synaptic processes. Herein, we report an interfacial memristor based on a Ga<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub> heterojunction that shows stable bipolar resistive switching behavior, long retention time, and high switching ratio. The conductance of the Au/Ga<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub>/In memristor can be gradually modulated under the voltage sweep mode as well as positive and negative pulse voltage stimulations, respectively, thus realizing the long-term potentiation/depression characteristics of the simulated biological synapse. A neural network based on the prepared memristor was built to recognize the handwritten picture data set with a recognition accuracy of 92.78% by using the NeuroSimV3.0 platform. Our work indicates that the Ga<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub> heterojunction memristor has significant potential in a neuromorphic computing system.</p>","PeriodicalId":62,"journal":{"name":"The Journal of Physical Chemistry Letters","volume":"15 45","pages":"11182–11188 11182–11188"},"PeriodicalIF":4.8000,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synaptic Properties of an Interfacial Memristor Based on a Ga2O3/Nb:SrTiO3 Heterojunction\",\"authors\":\"Youhong Wang, Wei Hu*, Kaijin Kang, Caili Dong and Xiaosheng Tang*, \",\"doi\":\"10.1021/acs.jpclett.4c0254810.1021/acs.jpclett.4c02548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Memristors have been extensively studied for tremendous potential for future neuromorphic computing hardware applications because of their ability to imitate biological synaptic processes. Herein, we report an interfacial memristor based on a Ga<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub> heterojunction that shows stable bipolar resistive switching behavior, long retention time, and high switching ratio. The conductance of the Au/Ga<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub>/In memristor can be gradually modulated under the voltage sweep mode as well as positive and negative pulse voltage stimulations, respectively, thus realizing the long-term potentiation/depression characteristics of the simulated biological synapse. A neural network based on the prepared memristor was built to recognize the handwritten picture data set with a recognition accuracy of 92.78% by using the NeuroSimV3.0 platform. Our work indicates that the Ga<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub> heterojunction memristor has significant potential in a neuromorphic computing system.</p>\",\"PeriodicalId\":62,\"journal\":{\"name\":\"The Journal of Physical Chemistry Letters\",\"volume\":\"15 45\",\"pages\":\"11182–11188 11182–11188\"},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2024-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Journal of Physical Chemistry Letters\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.jpclett.4c02548\",\"RegionNum\":2,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Journal of Physical Chemistry Letters","FirstCategoryId":"1","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.jpclett.4c02548","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Synaptic Properties of an Interfacial Memristor Based on a Ga2O3/Nb:SrTiO3 Heterojunction
Memristors have been extensively studied for tremendous potential for future neuromorphic computing hardware applications because of their ability to imitate biological synaptic processes. Herein, we report an interfacial memristor based on a Ga2O3/Nb:SrTiO3 heterojunction that shows stable bipolar resistive switching behavior, long retention time, and high switching ratio. The conductance of the Au/Ga2O3/Nb:SrTiO3/In memristor can be gradually modulated under the voltage sweep mode as well as positive and negative pulse voltage stimulations, respectively, thus realizing the long-term potentiation/depression characteristics of the simulated biological synapse. A neural network based on the prepared memristor was built to recognize the handwritten picture data set with a recognition accuracy of 92.78% by using the NeuroSimV3.0 platform. Our work indicates that the Ga2O3/Nb:SrTiO3 heterojunction memristor has significant potential in a neuromorphic computing system.
期刊介绍：
The Journal of Physical Chemistry (JPC) Letters is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, chemical physicists, physicists, material scientists, and engineers. An important criterion for acceptance is that the paper reports a significant scientific advance and/or physical insight such that rapid publication is essential. Two issues of JPC Letters are published each month.
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