High-performance cold-source field-effect transistors based on Cd3C2/ boron phosphide heterojunction

To overcome the short-channel effect and large gate leakage current in the field-effect transistors (FETs), some cold-source materials have been suggested as alternative materials. We explore the performance of FET based on the cold-source material Cd₃C₂ using the ab initio quantum transport method. It is shown that the figure of merits (FOMs) of Cd₃C₂/ Boron phosphide (BP) FET satisfies the requirements of ITRS2028 HP for UL=2 and UL=3nm. The performance of Cd₃C₂/BP FET is improved when Cd₃C₂ is p-type doped. Doping causes a super-exponential decrease in carrier concentration, thus the cold-source FET based on Cd₃C₂/BP is formed. When the doping concentration reaches 10.0 × 10¹³cm⁻², the device satisfies the requirements of ITRS2028 HP. More importantly, at the doping concentration of 10.0 × 10¹³cm⁻² for UL=2 and 3 nm, the subthreshold swings are 52.32 and 56.84 mV/dec, which are lower than 60 mV/dec. This work proposes a new cold-source FET based on Cd₃C₂/BP, whose excellent performance can make it a competitive candidate in future electronic devices.