S. Vijayaraghavan , A. Rajasekaran , Abdullah N Alodhayb , Muthumareeswaran Muthuramamoorthy , M. Vimalan , K. Ganesh Kumar
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引用次数: 0
摘要
采用水热法成功合成了掺银的斜方体α-Fe2O3 纳米粒子（Ag-α-Fe2O3）。利用 X 射线衍射 (XRD)、拉曼光谱和扫描电子显微镜 (SEM) 对合成纳米粒子的结构特征和形态进行了检测，其中在 218/cm 处观察到拉曼峰。通过 I-V 曲线、阻抗图以及介电常数（Ɛ）和介电损耗（Ɛ′）的测量，分析了分层在聚乙烯醇（PVA）薄膜中的掺银 α-Fe2O3 纳米粒子的电学特性。结果表明，在 PVA 薄膜中掺杂 Ag 的 α-Fe2O3 具有更强的电学特性，介电常数（0.5 × 103）和介电损耗（11 × 103）都显著增加。因此，在 PVA 薄膜中掺杂 Ag 的 α-Fe2O3 似乎是纳米电子学中一种前景广阔的应用。
Synthesis and enhanced electrical properties of Ag-doped α-Fe2O3 nanoparticles in PVA films for nanoelectronic applications
Rhombohedral α-Fe2O3 nanoparticles doped with silver (Ag-α-Fe2O3) were successfully synthesized using a hydrothermal method. The structural characteristics and morphology of the synthesized nanoparticles were examined using X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM), wherein the Raman peak was observed at 218/cm. The electrical properties of the Ag-doped α-Fe2O3 nanoparticles layered in polyvinyl alcohol (PVA) film were analyzed through I-V curves, impedance graphs, and measurements of dielectric constant (Ɛ) and dielectric loss (Ɛ′). Through the I-V curve, a current value of 3.68 × 10−2 μA was obtained, which was 52 % greater than that of the PVA film at an applied voltage of ± 100 V. The results demonstrated that the Ag-doped α-Fe2O3 in the PVA film exhibited enhanced electrical properties, with significant increases in both dielectric constant (0.5 × 103) and dielectric loss (11 × 103). Ag-doped α-Fe2O3 in PVA film, therefore, appears to be a promising applicants in Nano electronics.
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The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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