Predicting fracture strength of polarized GaN semiconductive ceramics under combined mechanical-current loading

Gallium nitride (GaN) piezoelectric semiconductor ceramics (PSCs) structures are often subjected to combined mechanical and electrical fields in engineering applications, leading to complex deformation and fracture challenges. This paper presents a fracture predictive model for PSCs under combined mechanical and electrical loading, developed using the boundary effect model rather than relying solely on data fitting. By introducing a current parameter that influences the characteristic crack length, the model effectively predicts the quasi-brittle fracture characteristics of GaN PSCs. Additionally, the model reveals how electric current affects the quasi-brittle fracture behavior of PSCs, providing crucial theoretical support for the reliable design of GaN intelligent semiconductor structures in complex environments.