Influence of bismuth content on the properties of glass-ceramics with composition xBi2O3-(0.40-x)B2O3-0.15ZnO-0.45P2O5: Synthesis, structural, thermal analysis, and dielectric relaxation process

The glass-ceramics materials with the sample composition of xBi₂O₃-(0.40-x) B₂O₃-0.15ZnO-0.45P₂O₅ (BBZP) (where x = 0.10, 0.15, 0.20, and 0.25) have been prepared using the conventional melt-quenching technique. Different nanocrystalline phases embedded inside the glass-ceramic matrix have been characterised by analysing x-ray diffraction spectra. The obtained density values as well as molar volume increases with the rise of bismuth content. The network structure of the glass ceramic samples has been investigated employing Raman spectroscopy. The DSC analysis reveals the decrease in Glass transition temperature (T_g) (433K–416K), and crystallisation temperature (T_c) (569K–556K) of the studied materials. The electrical properties of the samples have been investigated in the context of dielectric and modulus formalism. Different theoretical models have been employed to analyse the experimental data of dielectric and modulus spectra. The Nyquist plots of the materials have also been analyzed employing relevant models. It has been shown that the higher bismuth containing samples are highly dense with high thermal stability. Such materials also have high dielectric strength. Analysis of these performance indicators suggests the possible applications of these materials in electrochemical devices.