On the performance and thermal stability of solar cell based on CIGS-Sb2S3 combination with >35 % power conversion efficiency

This study presents a solar cell design utilizing a CIGS (copper-indium-gallium-selenide) absorber and Sb₂S₃ (antimony trisulfide) back surface field (BSF) layers, targeting high photovoltaic (PV) performance with an emphasis on minimum possible effect of ambient temperature. We simulated a solar cell design consisting of zinc oxide, surface defect layer, zinc sulfide, CIGS layer, and an Sb₂S₃ layer using SCAPS-1D software. Our findings indicate that 200 nm Sb₂S₃ layer and a 1600 nm CIGS layer is the preferred combination for achieving high PV performance and appropriate J-V characteristics of the proposed solar cell. For this design, the achieved values of V_OC (open circuit voltage), J_SC (short circuit current density), PCE (power conversion efficiency), and fill factor (FF) are 1.069V, 42.08 mA/cm², 35.94 %, and 80.31 %, respectively. The PV performance of the proposed solar cell is substantially better than the solar cell design without BSF layer as well as recently reported (2023-24) solar cell designs. This study further examines the impact of elevated ambient temperatures (295–360 K) on the PV performance. Our simulation results show that operating the proposed solar cell at moderately elevated temperatures is not a significant issue owing to small power temperature coefficient (−0.034 % per K), which is comparable to that of commercially available solar cells. These findings are expected to contribute to the ongoing advancement of PV solar cells, aiming for higher PCE and improved stability, including thermal stability. Proposed solar cell with low PTC and high PCE can be suitable for space applications where temperature fluctuation is severe, as well as in tropical areas.