{"title":"黑硅在宽光谱范围内的反射特性","authors":"G. Y. Ayvazyan","doi":"10.1134/S106833722470021X","DOIUrl":null,"url":null,"abstract":"<p>The structural and reflective properties (total reflectance and scattering) of black silicon layers formed by reactive ion etching have been studied. Reflectance spectra were determined in the visible, near-infrared, and near-ultraviolet wavelength ranges. The influence of etching duration on the optical behavior of black silicon layers is studied and the possibilities of their use in solar cells and photodetectors are discussed.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"59 2","pages":"188 - 192"},"PeriodicalIF":0.5000,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1134/S106833722470021X.pdf","citationCount":"0","resultStr":"{\"title\":\"Reflective Properties of Black Silicon in a Wide Spectral Range\",\"authors\":\"G. Y. Ayvazyan\",\"doi\":\"10.1134/S106833722470021X\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The structural and reflective properties (total reflectance and scattering) of black silicon layers formed by reactive ion etching have been studied. Reflectance spectra were determined in the visible, near-infrared, and near-ultraviolet wavelength ranges. The influence of etching duration on the optical behavior of black silicon layers is studied and the possibilities of their use in solar cells and photodetectors are discussed.</p>\",\"PeriodicalId\":623,\"journal\":{\"name\":\"Journal of Contemporary Physics (Armenian Academy of Sciences)\",\"volume\":\"59 2\",\"pages\":\"188 - 192\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2024-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1134/S106833722470021X.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Contemporary Physics (Armenian Academy of Sciences)\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S106833722470021X\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Contemporary Physics (Armenian Academy of Sciences)","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S106833722470021X","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Reflective Properties of Black Silicon in a Wide Spectral Range
The structural and reflective properties (total reflectance and scattering) of black silicon layers formed by reactive ion etching have been studied. Reflectance spectra were determined in the visible, near-infrared, and near-ultraviolet wavelength ranges. The influence of etching duration on the optical behavior of black silicon layers is studied and the possibilities of their use in solar cells and photodetectors are discussed.
期刊介绍：
Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.
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