Guoqiang Ding, Yiwen Gao, Hetong Zhang, Na Yang, Xiaobin Niu, Jianwei Wang
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引用次数: 0
摘要
根据单原子催化剂(SAC)的原理,我们在带有 N 空位的 MoSi2N4 单层表面设计了第四周期过渡金属(TM)作为活性位点,并通过第一性原理计算研究了这些单原子活性位点将 CO2 转化为 CO 的催化机理。结果表明,与原始的 MoSi2N4 单层相比,MoSi2N4 表面掺杂的 TM 原子大大提高了 CO2 还原反应(CO2RR)的活性。在我们分析的所有掺杂结构中,我们发现:(1) Sc、Ti 和 Mn 掺杂结构的极限电位非常低;(2) 在 Sc、Ti 和 Mn 掺杂结构中,Mn@MoSi2N4-Nv 结构的催化性能最好,极限电位仅为 -0.16 V,而且在 CO2RR 的竞争反应--氢进化反应中也具有优势。然而,中间反应物 *COOH 在 Mn@MoSi2N4-Nv 表面 298.15 K 时的结合自由能为正值,表明其处于不稳定状态,给 CO 产物的生成过程带来了麻烦。这与 0 K 时的吸附/结合能得出的结果不同,表明在考虑吸附/结合能时不能忽视温度效应。我们的工作为通过掺杂 TM 的 MoSi2N4 单层催化 CO2RR 的机制中的温度效应提供了见解。
Theoretical investigations of transition metal atom-doped MoSi2N4 monolayers as catalysts for electrochemical CO2 reduction reactions
Following the principle of single-atom catalysts (SACs), the fourth-period transition metals (TM) were designed as active sites on a MoSi2N4 monolayer surface with N vacancy, and the catalytic mechanisms of these single atom active sites for the conversion of CO2 to CO were investigated by first-principles calculations. Our results show that the doped TM atoms on the MoSi2N4 surface greatly enhance the CO2 reduction reaction (CO2RR) activity, compared with the pristine MoSi2N4 monolayer. Of all the doped structures analyzed in our work, we found: (1) the Sc, Ti, and Mn doped structures exhibit very low limiting potentials; (2) out of Sc, Ti and Mn doping structures, the Mn@MoSi2N4-Nv structure shows the best catalytic performance with a limiting potential of only –0.16 V and also has an advantage over the hydrogen evolution reaction, which is the competitive reaction of CO2RR. However, the positive binding free energy at 298.15 K of intermediate reactant *COOH on Mn@MoSi2N4-Nv surface indicates its unstable state, which cause troubles for the CO product generation process. This is different from the results derived from adsorption/binding energy at 0 K, which indicates that temperature effect cannot be ignored when considering adsorption/binding energy. Our work provides insights on the temperature effects in the catalytic mechanisms for CO2RR through TM doped MoSi2N4 monolayers.
期刊介绍:
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