T. K. Menshchikova, K. S. Nikonov, M. N. Brekhovskikh, L. A. Vaimugin, O. E. Myslitskii
{"title":"砷酸溶液的表面张力","authors":"T. K. Menshchikova, K. S. Nikonov, M. N. Brekhovskikh, L. A. Vaimugin, O. E. Myslitskii","doi":"10.1134/S0040579524700076","DOIUrl":null,"url":null,"abstract":"<p>Investigation of the physicochemical properties of the H<sub>3</sub>AsO<sub>4</sub>–H<sub>2</sub>O system is of great importance, since arsenic acid is involved in the electrochemical synthesis of arsine, which is used to produce A<sup>III</sup>B<sup>V</sup> semiconductors. The surface tension of arsenic acid solutions of various concentrations in a wide temperature range (20–80°C) was measured by the stalagmometric method. It has been determined that arsenic acid in an aqueous solution is a surface-inactive substance because, with increasing concentration of H<sub>3</sub>AsO<sub>4</sub> in solution, its surface tension increases.</p>","PeriodicalId":798,"journal":{"name":"Theoretical Foundations of Chemical Engineering","volume":"58 1","pages":"29 - 32"},"PeriodicalIF":0.7000,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface Tension of Arsenic Acid Solutions\",\"authors\":\"T. K. Menshchikova, K. S. Nikonov, M. N. Brekhovskikh, L. A. Vaimugin, O. E. Myslitskii\",\"doi\":\"10.1134/S0040579524700076\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Investigation of the physicochemical properties of the H<sub>3</sub>AsO<sub>4</sub>–H<sub>2</sub>O system is of great importance, since arsenic acid is involved in the electrochemical synthesis of arsine, which is used to produce A<sup>III</sup>B<sup>V</sup> semiconductors. The surface tension of arsenic acid solutions of various concentrations in a wide temperature range (20–80°C) was measured by the stalagmometric method. It has been determined that arsenic acid in an aqueous solution is a surface-inactive substance because, with increasing concentration of H<sub>3</sub>AsO<sub>4</sub> in solution, its surface tension increases.</p>\",\"PeriodicalId\":798,\"journal\":{\"name\":\"Theoretical Foundations of Chemical Engineering\",\"volume\":\"58 1\",\"pages\":\"29 - 32\"},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2024-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Theoretical Foundations of Chemical Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S0040579524700076\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, CHEMICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Theoretical Foundations of Chemical Engineering","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1134/S0040579524700076","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, CHEMICAL","Score":null,"Total":0}
Investigation of the physicochemical properties of the H3AsO4–H2O system is of great importance, since arsenic acid is involved in the electrochemical synthesis of arsine, which is used to produce AIIIBV semiconductors. The surface tension of arsenic acid solutions of various concentrations in a wide temperature range (20–80°C) was measured by the stalagmometric method. It has been determined that arsenic acid in an aqueous solution is a surface-inactive substance because, with increasing concentration of H3AsO4 in solution, its surface tension increases.
期刊介绍：
Theoretical Foundations of Chemical Engineering is a comprehensive journal covering all aspects of theoretical and applied research in chemical engineering, including transport phenomena; surface phenomena; processes of mixture separation; theory and methods of chemical reactor design; combined processes and multifunctional reactors; hydromechanic, thermal, diffusion, and chemical processes and apparatus, membrane processes and reactors; biotechnology; dispersed systems; nanotechnologies; process intensification; information modeling and analysis; energy- and resource-saving processes; environmentally clean processes and technologies.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
