{"title":"一种26-G $\\Omega$输入阻抗112-dB动态范围两步直接转换前端,改进$\\Delta$调制用于可穿戴生物电位采集","authors":"Yuzhi Hao;Hua Fan;Yong Lian;Mingyi Chen","doi":"10.1109/JSSC.2024.3514745","DOIUrl":null,"url":null,"abstract":"This article presents a high dynamic range (DR) direct conversion front-end (Direct-FE) IC enabling the wearable acquisition of weak bio-potentials superposed onto large motion artifacts (MAs). The prototype IC has been fabricated in a standard 0.18-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m CMOS process. Benefiting from the proposed feedback (FB) two-step direct conversion architecture with an improved <inline-formula> <tex-math>$\\Delta $ </tex-math></inline-formula>-modulation, as well as a novel differential difference amplifier (DDA) and a dynamic-element-matching (DEM) technique, it achieves a peak input range of 3.56 VPP, an input-referred noise (IRN) of <inline-formula> <tex-math>$2.2~{\\mu }$ </tex-math></inline-formula>Vrms, an input impedance of 26 G<inline-formula> <tex-math>$\\Omega $ </tex-math></inline-formula>, and a ±1.8-V electrode dc offset (EDO) tolerance, while consuming only 63-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>W power. Compared with state-of-the-art Direct-FEs, the proposed work demonstrates an advanced DR (112 dB) and a competitive FOMDR (175 dB). The prototype IC has been validated based on in vivo experiments, demonstrating its capability for artifact-tolerant wearable bio-potential acquisition.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 8","pages":"2890-2904"},"PeriodicalIF":5.6000,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 26-GΩ Input-Impedance 112-dB Dynamic-Range Two-Step Direct-Conversion Front-End With Improved Δ-Modulation for Wearable Biopotential Acquisition\",\"authors\":\"Yuzhi Hao;Hua Fan;Yong Lian;Mingyi Chen\",\"doi\":\"10.1109/JSSC.2024.3514745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents a high dynamic range (DR) direct conversion front-end (Direct-FE) IC enabling the wearable acquisition of weak bio-potentials superposed onto large motion artifacts (MAs). The prototype IC has been fabricated in a standard 0.18-<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>m CMOS process. Benefiting from the proposed feedback (FB) two-step direct conversion architecture with an improved <inline-formula> <tex-math>$\\\\Delta $ </tex-math></inline-formula>-modulation, as well as a novel differential difference amplifier (DDA) and a dynamic-element-matching (DEM) technique, it achieves a peak input range of 3.56 VPP, an input-referred noise (IRN) of <inline-formula> <tex-math>$2.2~{\\\\mu }$ </tex-math></inline-formula>Vrms, an input impedance of 26 G<inline-formula> <tex-math>$\\\\Omega $ </tex-math></inline-formula>, and a ±1.8-V electrode dc offset (EDO) tolerance, while consuming only 63-<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>W power. Compared with state-of-the-art Direct-FEs, the proposed work demonstrates an advanced DR (112 dB) and a competitive FOMDR (175 dB). The prototype IC has been validated based on in vivo experiments, demonstrating its capability for artifact-tolerant wearable bio-potential acquisition.\",\"PeriodicalId\":13129,\"journal\":{\"name\":\"IEEE Journal of Solid-state Circuits\",\"volume\":\"60 8\",\"pages\":\"2890-2904\"},\"PeriodicalIF\":5.6000,\"publicationDate\":\"2024-12-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Solid-state Circuits\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10810351/\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10810351/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 26-GΩ Input-Impedance 112-dB Dynamic-Range Two-Step Direct-Conversion Front-End With Improved Δ-Modulation for Wearable Biopotential Acquisition
This article presents a high dynamic range (DR) direct conversion front-end (Direct-FE) IC enabling the wearable acquisition of weak bio-potentials superposed onto large motion artifacts (MAs). The prototype IC has been fabricated in a standard 0.18-$\mu $ m CMOS process. Benefiting from the proposed feedback (FB) two-step direct conversion architecture with an improved $\Delta $ -modulation, as well as a novel differential difference amplifier (DDA) and a dynamic-element-matching (DEM) technique, it achieves a peak input range of 3.56 VPP, an input-referred noise (IRN) of $2.2~{\mu }$ Vrms, an input impedance of 26 G$\Omega $ , and a ±1.8-V electrode dc offset (EDO) tolerance, while consuming only 63-$\mu $ W power. Compared with state-of-the-art Direct-FEs, the proposed work demonstrates an advanced DR (112 dB) and a competitive FOMDR (175 dB). The prototype IC has been validated based on in vivo experiments, demonstrating its capability for artifact-tolerant wearable bio-potential acquisition.
期刊介绍:
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.