{"title":"利用太赫兹成像技术可视化硅片中的光导效应","authors":"Shiho Konokawa;Kazuaki Ishioka;Akinori Taira","doi":"10.23919/comex.2024XBL0141","DOIUrl":null,"url":null,"abstract":"In this paper, we report the results of reflection imaging of silicon wafers using terahertz waves, aiming to achieve both high resolution and transparency in sensing technology. We compare the theoretical calculations of the transmittance of silicon wafers with the experimental results obtained through imaging. Through this study, we were able to confirm the frequency characteristics of silicon wafers using terahertz reflection imaging.","PeriodicalId":54101,"journal":{"name":"IEICE Communications Express","volume":"14 1","pages":"5-7"},"PeriodicalIF":0.3000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10751762","citationCount":"0","resultStr":"{\"title\":\"Visualization of the Photoconductive Effect in Silicon Wafers Using Terahertz Imaging\",\"authors\":\"Shiho Konokawa;Kazuaki Ishioka;Akinori Taira\",\"doi\":\"10.23919/comex.2024XBL0141\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report the results of reflection imaging of silicon wafers using terahertz waves, aiming to achieve both high resolution and transparency in sensing technology. We compare the theoretical calculations of the transmittance of silicon wafers with the experimental results obtained through imaging. Through this study, we were able to confirm the frequency characteristics of silicon wafers using terahertz reflection imaging.\",\"PeriodicalId\":54101,\"journal\":{\"name\":\"IEICE Communications Express\",\"volume\":\"14 1\",\"pages\":\"5-7\"},\"PeriodicalIF\":0.3000,\"publicationDate\":\"2024-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10751762\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEICE Communications Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10751762/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEICE Communications Express","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10751762/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Visualization of the Photoconductive Effect in Silicon Wafers Using Terahertz Imaging
In this paper, we report the results of reflection imaging of silicon wafers using terahertz waves, aiming to achieve both high resolution and transparency in sensing technology. We compare the theoretical calculations of the transmittance of silicon wafers with the experimental results obtained through imaging. Through this study, we were able to confirm the frequency characteristics of silicon wafers using terahertz reflection imaging.