{"title":"具有可调汉明距离的128 kbit近似搜索功能的内容可寻址存储器","authors":"Esteban Garzón;Eyal Rechef;Roman Golman;Odem Harel;Yuval Harary;Paz Snapir;Marco Lanuzza;Adam Teman;Leonid Yavits","doi":"10.1109/JSSC.2025.3529715","DOIUrl":null,"url":null,"abstract":"The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified NOR-type associative memory cell that leverages the discharge speed of the matchline (ML) to directly measure the HD between the stored and the query patterns. This novel approach enables efficient in-memory approximate matching. The proposed design was fabricated in a 65-nm technology, running at 125 MHz with an operating voltage of 1.2 V and consuming approximately 0.2 fJ/bit/search at room temperature. HD-CAM features a user-programmable HD tolerance threshold, making it particularly efficient for compare-intensive applications, such as genome analysis, text processing, and database processing. Silicon measurements demonstrate that HD-CAM maintains <inline-formula> <tex-math>$F_{1}$ </tex-math></inline-formula> score above 90% under process, voltage, and temperature (PVT) variations across a range of HDs.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 8","pages":"3009-3019"},"PeriodicalIF":5.6000,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance\",\"authors\":\"Esteban Garzón;Eyal Rechef;Roman Golman;Odem Harel;Yuval Harary;Paz Snapir;Marco Lanuzza;Adam Teman;Leonid Yavits\",\"doi\":\"10.1109/JSSC.2025.3529715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified NOR-type associative memory cell that leverages the discharge speed of the matchline (ML) to directly measure the HD between the stored and the query patterns. This novel approach enables efficient in-memory approximate matching. The proposed design was fabricated in a 65-nm technology, running at 125 MHz with an operating voltage of 1.2 V and consuming approximately 0.2 fJ/bit/search at room temperature. HD-CAM features a user-programmable HD tolerance threshold, making it particularly efficient for compare-intensive applications, such as genome analysis, text processing, and database processing. Silicon measurements demonstrate that HD-CAM maintains <inline-formula> <tex-math>$F_{1}$ </tex-math></inline-formula> score above 90% under process, voltage, and temperature (PVT) variations across a range of HDs.\",\"PeriodicalId\":13129,\"journal\":{\"name\":\"IEEE Journal of Solid-state Circuits\",\"volume\":\"60 8\",\"pages\":\"3009-3019\"},\"PeriodicalIF\":5.6000,\"publicationDate\":\"2025-01-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Solid-state Circuits\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10851367/\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10851367/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance
The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified NOR-type associative memory cell that leverages the discharge speed of the matchline (ML) to directly measure the HD between the stored and the query patterns. This novel approach enables efficient in-memory approximate matching. The proposed design was fabricated in a 65-nm technology, running at 125 MHz with an operating voltage of 1.2 V and consuming approximately 0.2 fJ/bit/search at room temperature. HD-CAM features a user-programmable HD tolerance threshold, making it particularly efficient for compare-intensive applications, such as genome analysis, text processing, and database processing. Silicon measurements demonstrate that HD-CAM maintains $F_{1}$ score above 90% under process, voltage, and temperature (PVT) variations across a range of HDs.
期刊介绍:
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.