具有可调汉明距离的128 kbit近似搜索功能的内容可寻址存储器

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2025-01-23 DOI:10.1109/JSSC.2025.3529715
Esteban Garzón;Eyal Rechef;Roman Golman;Odem Harel;Yuval Harary;Paz Snapir;Marco Lanuzza;Adam Teman;Leonid Yavits
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引用次数: 0

摘要

随着数据密集型应用(如数据分析、机器学习、深度学习和计算基因组学)对近似匹配的需求日益增长,我们提出了汉明距离容忍(HD)内容寻址存储器(HD- cam)。HD- cam具有改进的nor型联想记忆单元,利用匹配线(ML)的放电速度直接测量存储模式和查询模式之间的HD。这种新颖的方法实现了高效的内存近似匹配。该设计采用65纳米工艺,工作电压为1.2 V,工作频率为125 MHz,室温下功耗约为0.2 fJ/bit/search。HD- cam具有用户可编程的高清公差阈值,使其在比较密集型应用(如基因组分析、文本处理和数据库处理)中特别高效。硅测量表明,HD-CAM在一系列hd的工艺,电压和温度(PVT)变化下保持了90%以上的分数。
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A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance
The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified NOR-type associative memory cell that leverages the discharge speed of the matchline (ML) to directly measure the HD between the stored and the query patterns. This novel approach enables efficient in-memory approximate matching. The proposed design was fabricated in a 65-nm technology, running at 125 MHz with an operating voltage of 1.2 V and consuming approximately 0.2 fJ/bit/search at room temperature. HD-CAM features a user-programmable HD tolerance threshold, making it particularly efficient for compare-intensive applications, such as genome analysis, text processing, and database processing. Silicon measurements demonstrate that HD-CAM maintains $F_{1}$ score above 90% under process, voltage, and temperature (PVT) variations across a range of HDs.
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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