基于深度学习的硅片缺陷分割与分类。

IF 2.9 Q2 MULTIDISCIPLINARY SCIENCES MethodsX Pub Date : 2025-06-01 Epub Date: 2025-01-06 DOI:10.1016/j.mex.2025.103158
Rohan Ingle, Aniket K. Shahade, Mayur Gaikwad, Shruti Patil
{"title":"基于深度学习的硅片缺陷分割与分类。","authors":"Rohan Ingle,&nbsp;Aniket K. Shahade,&nbsp;Mayur Gaikwad,&nbsp;Shruti Patil","doi":"10.1016/j.mex.2025.103158","DOIUrl":null,"url":null,"abstract":"<div><div>Integrated Circuits are made of various transistors that are embedded on a silicon wafer, these wafers are difficult to process and hence are prone to defects. Defecting these defects manually is a time consuming and labour-intensive task and hence automation is necessary. Deep Learning approach is better suited in this case as it is able to generalize defects if trained properly and can be a solution to segmentation and classification of defects automatically. The segmentation model mentioned in this study achieved a Mean Absolute Error (MAE) of 0.0036, a Root Mean Squared Error (RMSE) of 0.0576, a Dice Index (DSC) of 0.7731, and an Intersection over Union (IoU) of 0.6590. The classification model achieved 0.9705 Accuracy, 0.9678 Precision, 0.9705 Recall, and 0.9676 F1 Score. In order to make this process a more interactive, an LLM with Q&amp;A capabilities was integrated to solve any doubts and answer any questions regarding defects in wafers.</div><div>This approach helps automate the detection process thus improving quality of end product.<ul><li><span>•</span><span><div>Successful and precise defect segmentation and classification using Deep Learning was achieved.</div></span></li><li><span>•</span><span><div>High-intensity regions after post-processing.</div></span></li><li><span>•</span><span><div>An LLM offering defect analysis and guidance was streamlined.</div></span></li></ul></div></div>","PeriodicalId":18446,"journal":{"name":"MethodsX","volume":"14 ","pages":"Article 103158"},"PeriodicalIF":2.9000,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11773255/pdf/","citationCount":"0","resultStr":"{\"title\":\"Deep learning driven silicon wafer defect segmentation and classification\",\"authors\":\"Rohan Ingle,&nbsp;Aniket K. Shahade,&nbsp;Mayur Gaikwad,&nbsp;Shruti Patil\",\"doi\":\"10.1016/j.mex.2025.103158\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Integrated Circuits are made of various transistors that are embedded on a silicon wafer, these wafers are difficult to process and hence are prone to defects. Defecting these defects manually is a time consuming and labour-intensive task and hence automation is necessary. Deep Learning approach is better suited in this case as it is able to generalize defects if trained properly and can be a solution to segmentation and classification of defects automatically. The segmentation model mentioned in this study achieved a Mean Absolute Error (MAE) of 0.0036, a Root Mean Squared Error (RMSE) of 0.0576, a Dice Index (DSC) of 0.7731, and an Intersection over Union (IoU) of 0.6590. The classification model achieved 0.9705 Accuracy, 0.9678 Precision, 0.9705 Recall, and 0.9676 F1 Score. In order to make this process a more interactive, an LLM with Q&amp;A capabilities was integrated to solve any doubts and answer any questions regarding defects in wafers.</div><div>This approach helps automate the detection process thus improving quality of end product.<ul><li><span>•</span><span><div>Successful and precise defect segmentation and classification using Deep Learning was achieved.</div></span></li><li><span>•</span><span><div>High-intensity regions after post-processing.</div></span></li><li><span>•</span><span><div>An LLM offering defect analysis and guidance was streamlined.</div></span></li></ul></div></div>\",\"PeriodicalId\":18446,\"journal\":{\"name\":\"MethodsX\",\"volume\":\"14 \",\"pages\":\"Article 103158\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2025-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11773255/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"MethodsX\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2215016125000068\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2025/1/6 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q2\",\"JCRName\":\"MULTIDISCIPLINARY SCIENCES\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"MethodsX","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2215016125000068","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/1/6 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0

摘要

集成电路是由嵌入在硅片上的各种晶体管组成的,这些硅片很难加工,因此容易出现缺陷。手动检测这些缺陷是一项耗时且劳力密集的任务,因此自动化是必要的。深度学习方法更适合这种情况,因为如果训练得当,它可以泛化缺陷,并且可以自动分割和分类缺陷。本文所提到的分割模型的平均绝对误差(MAE)为0.0036,均方根误差(RMSE)为0.0576,Dice指数(DSC)为0.7731,Intersection over Union (IoU)为0.6590。分类模型的准确率为0.9705,精密度为0.9678,召回率为0.9705,F1得分为0.9676。为了使这一过程更具互动性,集成了一个具有问答功能的LLM,以解决任何疑问并回答有关晶圆缺陷的任何问题。这种方法有助于自动化检测过程,从而提高最终产品的质量。•使用深度学习实现了成功和精确的缺陷分割和分类。•后处理后的高强度区域。提供缺陷分析和指导的LLM是流线型的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Deep learning driven silicon wafer defect segmentation and classification
Integrated Circuits are made of various transistors that are embedded on a silicon wafer, these wafers are difficult to process and hence are prone to defects. Defecting these defects manually is a time consuming and labour-intensive task and hence automation is necessary. Deep Learning approach is better suited in this case as it is able to generalize defects if trained properly and can be a solution to segmentation and classification of defects automatically. The segmentation model mentioned in this study achieved a Mean Absolute Error (MAE) of 0.0036, a Root Mean Squared Error (RMSE) of 0.0576, a Dice Index (DSC) of 0.7731, and an Intersection over Union (IoU) of 0.6590. The classification model achieved 0.9705 Accuracy, 0.9678 Precision, 0.9705 Recall, and 0.9676 F1 Score. In order to make this process a more interactive, an LLM with Q&A capabilities was integrated to solve any doubts and answer any questions regarding defects in wafers.
This approach helps automate the detection process thus improving quality of end product.
  • Successful and precise defect segmentation and classification using Deep Learning was achieved.
  • High-intensity regions after post-processing.
  • An LLM offering defect analysis and guidance was streamlined.
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来源期刊
MethodsX
MethodsX Health Professions-Medical Laboratory Technology
CiteScore
3.60
自引率
5.30%
发文量
314
审稿时长
7 weeks
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