未掺杂InAs/GaSb超晶格的纳米级电子性质研究

IF 0.7 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY Bulletin of the Lebedev Physics Institute Pub Date : 2025-02-02 DOI:10.3103/S1068335624601985

D. E. Sviridov

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引用次数: 0

摘要

在大气条件下，利用扩展电阻显微镜（SRM），我们在周期为7.5 nm的未掺杂的InAs/GaSb ii型超晶格的切割截面上展示了稳定的电学性质对比。结果表明，这种对比是超晶格中InAs和GaSb层电导率差异的结果。提出了一种简单有效的红外探测器中InAs/GaSb超晶格结构和电子空穴子系统监测方法。

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Investigation of Nanoscale Electronic Properties of Undoped InAs/GaSb Superlattice by Spreading Resistance Microscopy

Using spreading resistance microscopy (SRM) under atmospheric conditions, we demonstrate a stable contrast of the electrical properties on the cleaved cross-section of an undoped InAs/GaSb type-II superlattice with a period of 7.5 nm. It is shown that this contrast is a consequence of the difference in the conductivity of the InAs and GaSb layers of the superlattice. A simple and effective method is proposed for monitoring the structure and electron‒hole subsystem of InAs/GaSb superlattices used in modern IR photodetectors.

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来源期刊

Bulletin of the Lebedev Physics Institute PHYSICS, MULTIDISCIPLINARY-

CiteScore

0.70

自引率

25.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.