Bejoys Jacob, João Azevedo, Jana B Nieder, Bruno Romeira
{"title":"n型砷化镓单极纳米oled的电致发光研究。","authors":"Bejoys Jacob, João Azevedo, Jana B Nieder, Bruno Romeira","doi":"10.1364/OL.546063","DOIUrl":null,"url":null,"abstract":"<p><p>In this Letter, we report the observation of electroluminescence (EL) at ∼866 nm from <i>n</i>-<i>i</i>-<i>n</i> unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with a top diameter of 166 nm, arranged in a 10 × 10 pillar array. Hole generation through impact ionization and Zener tunneling is achieved by incorporating an AlAs/GaAs/AlAs double-barrier quantum well within the epilayer structure of the <i>n</i>-<i>i</i>-<i>n</i> diode. Time-resolved EL measurements reveal decay lifetimes >300 ps, allowing us to estimate an internal quantum efficiency (IQE) higher than 2% at sub-mA current injection. These results demonstrate the potential for a new, to the best of our knowledge, class of <i>n</i>-type nanoscale light-emitting devices.</p>","PeriodicalId":19540,"journal":{"name":"Optics letters","volume":"50 4","pages":"1101-1104"},"PeriodicalIF":3.3000,"publicationDate":"2025-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electroluminescence in <i>n</i>-type GaAs unipolar nanoLEDs.\",\"authors\":\"Bejoys Jacob, João Azevedo, Jana B Nieder, Bruno Romeira\",\"doi\":\"10.1364/OL.546063\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>In this Letter, we report the observation of electroluminescence (EL) at ∼866 nm from <i>n</i>-<i>i</i>-<i>n</i> unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with a top diameter of 166 nm, arranged in a 10 × 10 pillar array. Hole generation through impact ionization and Zener tunneling is achieved by incorporating an AlAs/GaAs/AlAs double-barrier quantum well within the epilayer structure of the <i>n</i>-<i>i</i>-<i>n</i> diode. Time-resolved EL measurements reveal decay lifetimes >300 ps, allowing us to estimate an internal quantum efficiency (IQE) higher than 2% at sub-mA current injection. These results demonstrate the potential for a new, to the best of our knowledge, class of <i>n</i>-type nanoscale light-emitting devices.</p>\",\"PeriodicalId\":19540,\"journal\":{\"name\":\"Optics letters\",\"volume\":\"50 4\",\"pages\":\"1101-1104\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-02-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optics letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1364/OL.546063\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1364/OL.546063","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
Electroluminescence in n-type GaAs unipolar nanoLEDs.
In this Letter, we report the observation of electroluminescence (EL) at ∼866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with a top diameter of 166 nm, arranged in a 10 × 10 pillar array. Hole generation through impact ionization and Zener tunneling is achieved by incorporating an AlAs/GaAs/AlAs double-barrier quantum well within the epilayer structure of the n-i-n diode. Time-resolved EL measurements reveal decay lifetimes >300 ps, allowing us to estimate an internal quantum efficiency (IQE) higher than 2% at sub-mA current injection. These results demonstrate the potential for a new, to the best of our knowledge, class of n-type nanoscale light-emitting devices.
期刊介绍：
The Optical Society (OSA) publishes high-quality, peer-reviewed articles in its portfolio of journals, which serve the full breadth of the optics and photonics community.
Optics Letters offers rapid dissemination of new results in all areas of optics with short, original, peer-reviewed communications. Optics Letters covers the latest research in optical science, including optical measurements, optical components and devices, atmospheric optics, biomedical optics, Fourier optics, integrated optics, optical processing, optoelectronics, lasers, nonlinear optics, optical storage and holography, optical coherence, polarization, quantum electronics, ultrafast optical phenomena, photonic crystals, and fiber optics. Criteria used in determining acceptability of contributions include newsworthiness to a substantial part of the optics community and the effect of rapid publication on the research of others. This journal, published twice each month, is where readers look for the latest discoveries in optics.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
