OP-GaAs0.75P0.25异质外延气相中二次谐波的产生

IF 2.6 3区化学 Q2 CHEMISTRY, MULTIDISCIPLINARY CrystEngComm Pub Date : 2025-02-18 DOI:10.1039/D4CE01304B

Li Wang, Shivashankar R. Vangala, Stefan Popien, Marcus Beutler, J. Matthew Mann, Vladimir L. Tassev, Edlef Büttner and Valentin Petrov

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摘要

利用氢化物气相外延在结构GaAs模板上生长出约500 μm厚的定向图图化GaAs0.75P0.25层，证明了在5.5 μm的飞秒脉冲下，重复频率为80 MHz的二次谐波产生。所用样品的长度（~ 500 μm）仅对应4个准相位匹配周期，相干长度为8个。

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Second-harmonic generation in OP-GaAs0.75P0.25 heteroepitaxially grown from the vapor phase

Second-harmonic generation using femtosecond pulses at 5.5 μm with a repetition rate of 80 MHz is demonstrated in ∼500 μm-thick layers of orientation-patterned GaAs_0.75P_0.25 grown using hydride vapor phase epitaxy on a structured GaAs template. The length of the sample used (∼500 μm) corresponds to only 4 quasi-phase matching periods of 8 coherence lengths.

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