A. V. Tyazhev, I. D. Chsherbakov, L. K. Shaimerdenova, A. V. Shemeryankina, P. V. Kosmachev, S. V. Panin
{"title":"基于HR-GaAs:Cr的电离辐射传感器的电流-电压特性","authors":"A. V. Tyazhev, I. D. Chsherbakov, L. K. Shaimerdenova, A. V. Shemeryankina, P. V. Kosmachev, S. V. Panin","doi":"10.1007/s11182-024-03359-y","DOIUrl":null,"url":null,"abstract":"<div><p>The paper presents calculation of current–voltage characteristics of Me-<i>i</i>-Me HR-GaAs:Cr structures compared with the experimental data. With respect to the voltage redistribution to an extremely high resistance of the <i>i</i>-layer, the current flow is limited by processes in the space charge region of the reverse-biased Schottky barrier formed at the <i>i</i>-Me interface.</p></div>","PeriodicalId":770,"journal":{"name":"Russian Physics Journal","volume":"67 11","pages":"2152 - 2158"},"PeriodicalIF":0.4000,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Current–voltage characteristic of ionizing radiation sensors based on HR-GaAs:Cr\",\"authors\":\"A. V. Tyazhev, I. D. Chsherbakov, L. K. Shaimerdenova, A. V. Shemeryankina, P. V. Kosmachev, S. V. Panin\",\"doi\":\"10.1007/s11182-024-03359-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The paper presents calculation of current–voltage characteristics of Me-<i>i</i>-Me HR-GaAs:Cr structures compared with the experimental data. With respect to the voltage redistribution to an extremely high resistance of the <i>i</i>-layer, the current flow is limited by processes in the space charge region of the reverse-biased Schottky barrier formed at the <i>i</i>-Me interface.</p></div>\",\"PeriodicalId\":770,\"journal\":{\"name\":\"Russian Physics Journal\",\"volume\":\"67 11\",\"pages\":\"2152 - 2158\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2025-01-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Russian Physics Journal\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11182-024-03359-y\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Physics Journal","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11182-024-03359-y","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Current–voltage characteristic of ionizing radiation sensors based on HR-GaAs:Cr
The paper presents calculation of current–voltage characteristics of Me-i-Me HR-GaAs:Cr structures compared with the experimental data. With respect to the voltage redistribution to an extremely high resistance of the i-layer, the current flow is limited by processes in the space charge region of the reverse-biased Schottky barrier formed at the i-Me interface.
期刊介绍:
Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.