Optimized RbPbI3-Based perovskite solar cells with SnS2 ETL and MoO3 HTL achieving simulated PCE of 32.72%

The pursuit of alternative absorber materials with higher structural and thermal stability has been fueled by the growing demand for high-efficiency and stable perovskite solar cells (PSCs). Using its improved durability and optoelectronic qualities, this work investigates RbPbI₃ as a possible substitute for conventional perovskites. Using SCAPS-1D to model an Ag/FTO/ETL/RbPbI₃/Ni device structure, a power conversion efficiency (PCE) of 28.12 % was first obtained with SnS₂ ETL (electron transport layer). Then, hole transport layer (HTL) concept has been used to improve the performances more. The thickness, defect density, and doping concentration of ETL and HTL, and absorber were all methodically optimized to improve performance. This led to a markedly improved V_OC of 1.22 V, PCE of 32.72 %, J_SC of 32.21 mA/cm², and FF of 83.27 % with MoO₃ HTL. The new results demonstrate that RbPbI₃ is a suitable substitute for long-term solar energy applications due to its improved stability, improved charge transport through SnS₂ and MoO₃, and decreased recombination losses. This research will have an impact on the development of high-performance, stable, and eco-friendly photovoltaic technologies in the future by directing the experimental validation and manufacture of RbPbI₃-based PSCs.