通过空间限制法对双层 MoS2 kirigami 结构进行边缘诱导选择性蚀刻。

IF 6.6 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Nanoscale Horizons Pub Date : 2025-03-13 DOI:10.1039/D4NH00561A
Weijie Ma, Qing Zhang, Jie Zhu, Yang Guo, Yajing Sun, Lin Li and Dechao Geng
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引用次数: 0

摘要

边缘布置的可控制备,特别是锯齿形边缘的定制需求,仍然是难以捉摸的。本文提出了一种选择性刻蚀策略,可以直接调节MoS2基利ami结构的mo之字形和s之字形边缘,为二维材料的边缘工程铺平了道路,并为下一代光电子学提供了有前途的候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Edge-induced selective etching of bilayer MoS2 kirigami structures via a space-confined method†

The controllable preparation of edge arrangements, particularly the customization of zigzag edges on demand, remains elusive. Here, a selective etching strategy to directly regulate Mo-zigzag and S-zigzag edges of MoS2 kirigami structures is proposed, paving the way for edge engineering of 2D materials and providing promising candidates for next-generation optoelectronics.

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来源期刊
Nanoscale Horizons
Nanoscale Horizons Materials Science-General Materials Science
CiteScore
16.30
自引率
1.00%
发文量
141
期刊介绍: Nanoscale Horizons stands out as a premier journal for publishing exceptionally high-quality and innovative nanoscience and nanotechnology. The emphasis lies on original research that introduces a new concept or a novel perspective (a conceptual advance), prioritizing this over reporting technological improvements. Nevertheless, outstanding articles showcasing truly groundbreaking developments, including record-breaking performance, may also find a place in the journal. Published work must be of substantial general interest to our broad and diverse readership across the nanoscience and nanotechnology community.
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