hBN中负电荷硼空位缺陷的磁场灵敏度优化(Adv. Quantum technology . 4/2025)

IF 4.3 Q1 OPTICS Advanced quantum technologies Pub Date : 2025-04-08 DOI:10.1002/qute.202570008
Benjamin Whitefield, Milos Toth, Igor Aharonovich, Jean-Philippe Tetienne, Mehran Kianinia
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引用次数: 0

摘要

该图像描绘了六方氮化硼晶格中带负电荷的硼空位的光学激发。该晶格位于金条纹的顶部,该条纹应用用于光学检测磁共振的射频。放置在晶格上的磁体代表了这种自旋控制技术的精确磁场传感能力。更多见2300118号文章,Igor Aharonovich和他的同事。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Magnetic Field Sensitivity Optimization of Negatively Charged Boron Vacancy Defects in hBN (Adv. Quantum Technol. 4/2025)

The image depicts the optical excitation of negatively charged boron vacancies in a hexagonal boron nitride lattice. The lattice is positioned on top of a gold stripe which applies a radio frequency used for optically detected magnetic resonance. The magnet placed on the lattice represents the capability of precise magnetic field sensing available with this spin control technique. More in article number 2300118, Igor Aharonovich and co-workers.

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