盖格-迈勒模式雪崩光电二极管读出闪烁相机信号的温度依赖性。

William C J Hunter, Robert S Miyaoka, L R Macdonald, Thomas K Lewellen
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引用次数: 6

摘要

我们正在开发一个原型单片闪烁相机与光学传感器在入口表面(SES)用于统计估计的相互作用深度在一个连续闪烁体。我们选择使用盖格-米勒模式雪崩光电二极管(GM-APDs)用于SES相机,因为它们具有许多理想的特性;对于预期的应用(SES和PET/MR成像),它们提供了薄的衰减曲线,并且对大磁场的操作不敏感。然而,在RF环境(如MR扫描仪)中使用gm - apd必须解决的一个问题是这种半导体材料可能发生的热耗散。gm - apd的信号强烈依赖于结温。因此,我们正在开发一种基于gm - apd的温度控制PET相机,其监测的温度可用于动态地解释输出信号的温度依赖性。目前,我们的目标是表征基于gm - apd的闪烁相机的输出信号对温度和偏置的依赖。我们测试了两款gm - apd,一款是Zecotek的原型MAPD-3N,另一款是SensL的商用SPMArray2。我们观察到温度对增益的主要影响来自击穿电压对温度的线性依赖(分别为0.071 V/°C和0.024 V/°C);在2.3 V过量偏置(击穿以上电压)下,MAPD-3N的增益随温度变化(不调整偏置电压)为-8.5% /°C, SPMArray2为- 1.5% /°C。对于固定的过量偏置,暗电流随温度的变化变化很大,当温度从20°C变化到10°C时,暗电流下降了25%到40%,从10°C变化到0°C时,暗电流又下降了20%到35%。最后,使用两个MAPD-3N读取一对3.5 × 3.5 × 20 mm(3) Zecotek LFS-3闪烁体,我们观察到当我们将温度从23°C降低到10°C时,一致性时间分辨率从1.7 nsec降低到1.5 nsec。
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Measured Temperature Dependence of Scintillation Camera Signals Read Out by Geiger-Müller Mode Avalanche Photodiodes.

We are developing a prototype monolithic scintillation camera with optical sensors on the entrance surface (SES) for use with statistically-estimated depth-of-interaction in a continuous scintillator. We opt to use Geiger-Müller mode avalanche photodiodes (GM-APDs) for the SES camera since they possess many desirable properties; for the intended application (SES and PET/MR imaging), they offer a thin attenuation profile and an operational insensitivity to large magnetic fields. However, one issue that must be addressed in using GM-APDs in an RF environment (as in MR scanners) is the thermal dissipation that can occur in this semiconductor material.Signals of GM-APDs are strongly dependent on junction temperature. Consequently, we are developing a temperature-controlled GM-APD-based PET camera whose monitored temperature can be used to dynamically account for the temperature dependence of the output signals. Presently, we aim to characterize the output-signal dependence on temperature and bias for a GM-APD-based scintillation camera.We've examined two GM-APDs, a Zecotek prototype MAPD-3N, and a SensL commercial SPMArray2. The dominant effect of temperature on gain that we observe results from a linear dependence of breakdown voltage on temperature (0.071 V/°C and 0.024 V/°C, respectively); at 2.3 V excess bias (voltage above breakdown) the resulting change in gain with temperature (without adjusting bias voltage) is -8.5% per °C for the MAPD-3N and -1.5 % per °C for the SPMArray2. For fixed excess bias, change in dark current with temperature varied widely, decreasing by 25% to 40% as temperature was changed from 20 °C to 10 °C and again by 20% to 35% going from 10 °C to 0 °C. Finally, using two MAPD-3N to read out a pair of 3.5-by-3.5-by-20 mm(3) Zecotek LFS-3 scintillators in coincidence, we observe a decrease from 1.7 nsec to 1.5 nsec in coincidence-time resolution as we lowered temperature from 23 °C to 10 °C.

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