mn掺杂BP半导体的金属铁磁性能

IF 2.4 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Molecular and Engineering Materials Pub Date : 2021-02-16 DOI:10.1142/s2251237321300011
M. Boutaleb, A. Tadjer
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引用次数: 0

摘要

以不同浓度的锰作为磁性杂质掺杂磷化硼(BP),得到金属铁磁性材料B[公式:见文]MnxP =([公式:见文],0.125,0.0625)。在Wu-Cohen广义梯度近似(WC-GGA)的框架下,用第一性原理自旋密度泛函理论(DFT)计算了它们的结构和电子性质。DMSs BP是由掺杂锰引起的四面体晶体场SP3杂化引起的,这是由四个磷阴离子的包围引起的。这些化合物不是半金属,但表现出较差的金属铁磁性,其原因是由于BP的高共价化学键。B[公式:见原文]MnxP是金属铁磁性材料,不用于自旋电子工业。
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Metallic Ferromagnetic Property of Mn-Doped BP Semiconductors
The doping of boron phosphide (BP) with manganese as magnetic impurity at different concentrations provides metallic ferromagnetic materials B[Formula: see text]MnxP at ([Formula: see text], 0.125, 0.0625). Their structural and electronic properties are calculated by the first-principle spin-density functional theory (DFT) within the framework of the Wu–Cohen generalized gradient approximation (WC-GGA). The DMSs BP originated from doping manganese contributed in SP3 hybridization of tetrahedral crystal field caused by the surrounding of four phosphorus anions. These compounds are not half-metallic but exhibit a poorly metallic ferromagnetic nature, the cause is due to the highly covalent chemical bond of BP. The B[Formula: see text]MnxP are metallic ferromagnetic materials and are not to be intended for spintronic industry.
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Journal of Molecular and Engineering Materials
Journal of Molecular and Engineering Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
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