在深亚微米CMOS技术中提高单级运算放大器性能的简单技术

IF 1.6 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Low Power Electronics and Applications Pub Date : 2023-01-04 DOI:10.3390/jlpea13010004
J. Ramírez-Angulo, Alejandra Díaz-Armendariz, J. E. Molinar-Solís, A. Díaz-Sánchez, J. Huerta-Chua
{"title":"在深亚微米CMOS技术中提高单级运算放大器性能的简单技术","authors":"J. Ramírez-Angulo, Alejandra Díaz-Armendariz, J. E. Molinar-Solís, A. Díaz-Sánchez, J. Huerta-Chua","doi":"10.3390/jlpea13010004","DOIUrl":null,"url":null,"abstract":"A comparative study of one-stage-amp performance improvement based on simulations in 22 nm, 45 nm, 90 nm, and 180 nm in deep submicrometer CMOS technologies is discussed. Generic SPICE models were used to simulate the circuits. It is shown that in all cases a simple modification using resistive local common mode feedback increases open-loop gain and gain-bandwidth product, peak output currents, and slew rate by close to an order of magnitude. It is shown that this modification is especially appropriate for its utilization in current CMOS technologies since large factor improvements were not available in previous technologies. The OTAs with resistive local common mode feedback require simple phase lead compensation with a very small additional silicon area and keep supply requirements and static power dissipation unchanged.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2023-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Simple Technique to Improve Essentially the Performance of One-Stage Op-Amps in Deep Submicrometer CMOS Technologies\",\"authors\":\"J. Ramírez-Angulo, Alejandra Díaz-Armendariz, J. E. Molinar-Solís, A. Díaz-Sánchez, J. Huerta-Chua\",\"doi\":\"10.3390/jlpea13010004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comparative study of one-stage-amp performance improvement based on simulations in 22 nm, 45 nm, 90 nm, and 180 nm in deep submicrometer CMOS technologies is discussed. Generic SPICE models were used to simulate the circuits. It is shown that in all cases a simple modification using resistive local common mode feedback increases open-loop gain and gain-bandwidth product, peak output currents, and slew rate by close to an order of magnitude. It is shown that this modification is especially appropriate for its utilization in current CMOS technologies since large factor improvements were not available in previous technologies. The OTAs with resistive local common mode feedback require simple phase lead compensation with a very small additional silicon area and keep supply requirements and static power dissipation unchanged.\",\"PeriodicalId\":38100,\"journal\":{\"name\":\"Journal of Low Power Electronics and Applications\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2023-01-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Low Power Electronics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3390/jlpea13010004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Low Power Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/jlpea13010004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 1

摘要

基于22 nm、45 nm、90 nm和180 nm深亚微米CMOS技术的仿真,对一级放大器性能的改进进行了比较研究。采用通用SPICE模型对电路进行仿真。结果表明,在所有情况下,使用阻性局部共模反馈的简单修改可将开环增益和增益带宽积、峰值输出电流和摆幅率提高近一个数量级。结果表明,这种改进特别适合其在当前CMOS技术中的应用,因为在以前的技术中无法获得大因子改进。具有阻性本地共模反馈的ota需要简单的相位引线补偿和非常小的额外硅面积,并保持电源要求和静态功耗不变。
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Simple Technique to Improve Essentially the Performance of One-Stage Op-Amps in Deep Submicrometer CMOS Technologies
A comparative study of one-stage-amp performance improvement based on simulations in 22 nm, 45 nm, 90 nm, and 180 nm in deep submicrometer CMOS technologies is discussed. Generic SPICE models were used to simulate the circuits. It is shown that in all cases a simple modification using resistive local common mode feedback increases open-loop gain and gain-bandwidth product, peak output currents, and slew rate by close to an order of magnitude. It is shown that this modification is especially appropriate for its utilization in current CMOS technologies since large factor improvements were not available in previous technologies. The OTAs with resistive local common mode feedback require simple phase lead compensation with a very small additional silicon area and keep supply requirements and static power dissipation unchanged.
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来源期刊
Journal of Low Power Electronics and Applications
Journal of Low Power Electronics and Applications Engineering-Electrical and Electronic Engineering
CiteScore
3.60
自引率
14.30%
发文量
57
审稿时长
11 weeks
期刊最新文献
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