Mg掺杂ZnS和ZnSe薄膜表面性质的x射线光电子能谱分析

IF 1.8 4区 物理与天体物理 Q2 SPECTROSCOPY Journal of Electron Spectroscopy and Related Phenomena Pub Date : 2023-07-01 DOI:10.1016/j.elspec.2023.147341
V.S. Ganesha Krishna, M.G. Mahesha
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引用次数: 1

摘要

利用x射线光电子能谱(XPS)研究了喷镀mg掺杂ZnS和ZnSe薄膜的表面性质。测定了znmggs和ZnMgSe中核心电子的能级、峰位、面积比和半最大值时的全宽度。在分析中使用了对化学环境变化高度敏感的俄歇峰的化学位移。组分分析表明,ZnMgSe薄膜缺硒。镁2p的XPS峰由ZnMgSe膜的50.46 eV位移到znmggs膜的50.63 eV,镁2s的XPS峰由ZnMgSe膜的86.56 eV位移到znmggs膜的87.64 eV。对ZnMgSe薄膜中氧化物的形成进行了详细的论证。两种薄膜的离子度均约为0.51。螺旋钻和芯级峰的峰移用于分析材料的结合强度、氧化态和结合类型。
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Analysis of surface properties of Mg doped ZnS and ZnSe thin films through x-ray photoelectron spectroscopy

The surface properties of the spray-deposited Mg-doped ZnS and ZnSe films were investigated using X-ray photoelectron spectroscopy (XPS). The energy levels of the core electrons in ZnMgS and ZnMgSe, their peak positions, area ratios, and full width at half maximum were determined. Chemical shifts in Auger peaks, which are highly sensitive to changes in the chemical environment were used in the analysis. Compositional analysis indicated selenium deficiency in the ZnMgSe films. XPS peak of magnesium 2p showed a shift from 50.46 eV for ZnMgSe film to 50.63 eV for ZnMgS film and Mg 2s peak shift from 86.56 eV for ZnMgSe to 87.64 eV for ZnMgS films. A careful justification for the formation of oxides in the ZnMgSe films is also given. Ionicity for both films is about 0.51. Peak shifts in the Auger and core-level peaks are used to analyze the material's bonding strength, oxidation states, and bonding types.

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来源期刊
CiteScore
3.30
自引率
5.30%
发文量
64
审稿时长
60 days
期刊介绍: The Journal of Electron Spectroscopy and Related Phenomena publishes experimental, theoretical and applied work in the field of electron spectroscopy and electronic structure, involving techniques which use high energy photons (>10 eV) or electrons as probes or detected particles in the investigation.
期刊最新文献
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