S. N. Musaeva, E. Kerimov, N. F. Kazımov, S. Huseynova
{"title":"铂硅化物硅肖特基二极管特性","authors":"S. N. Musaeva, E. Kerimov, N. F. Kazımov, S. Huseynova","doi":"10.26549/MET.V2I2.850","DOIUrl":null,"url":null,"abstract":"Abstrat: Photoelectric measurements are used to obtain additional information on the transportation mechanism of Schottky barrier structures.The main purpose of the study is to investigate the photoelectric properties of Shottky diodes based on PtSi - n - Si and PtSi - p - Si contacts.","PeriodicalId":66865,"journal":{"name":"现代电子技术(英文)","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2018-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Platinum Silicide-Silicon Schottky Diode Characteristics\",\"authors\":\"S. N. Musaeva, E. Kerimov, N. F. Kazımov, S. Huseynova\",\"doi\":\"10.26549/MET.V2I2.850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstrat: Photoelectric measurements are used to obtain additional information on the transportation mechanism of Schottky barrier structures.The main purpose of the study is to investigate the photoelectric properties of Shottky diodes based on PtSi - n - Si and PtSi - p - Si contacts.\",\"PeriodicalId\":66865,\"journal\":{\"name\":\"现代电子技术(英文)\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"现代电子技术(英文)\",\"FirstCategoryId\":\"1093\",\"ListUrlMain\":\"https://doi.org/10.26549/MET.V2I2.850\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"现代电子技术(英文)","FirstCategoryId":"1093","ListUrlMain":"https://doi.org/10.26549/MET.V2I2.850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Abstrat: Photoelectric measurements are used to obtain additional information on the transportation mechanism of Schottky barrier structures.The main purpose of the study is to investigate the photoelectric properties of Shottky diodes based on PtSi - n - Si and PtSi - p - Si contacts.
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