T. Nurakhmetov, K. Zhangylyssov, A. Zhunusbekov, D. Daurenbekov, T. Alibay, B. Sadykova, B. Yussupbekova, D. Tolekov
{"title":"CaSO4晶体中产生本征电子空穴捕获中心的机制","authors":"T. Nurakhmetov, K. Zhangylyssov, A. Zhunusbekov, D. Daurenbekov, T. Alibay, B. Sadykova, B. Yussupbekova, D. Tolekov","doi":"10.32523/ejpfm.2021050308","DOIUrl":null,"url":null,"abstract":"The mechanism of creation of electron-hole trapping centers in CaSO4 at 15-300 K was investigated by the methods of vacuum-ultraviolet and thermoactivation spectroscopy. It is shown that electron-hole trapping centers are formed upon trap of electrons in the anionic complexes SO4− and localization of holes in the form of SO4− radical. Based on the measurement of the spectrum of excitation of long-wavelength recombination emission at 3.0-3.1 eV and 2.7 eV, the energy distance of the formed electron-hole trapping centers was estimated (4.43 eV and 3.87 eV).","PeriodicalId":36047,"journal":{"name":"Eurasian Journal of Physics and Functional Materials","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Mechanisms for the creation of intrinsic electron-hole trapping centers in a CaSO4 crystall\",\"authors\":\"T. Nurakhmetov, K. Zhangylyssov, A. Zhunusbekov, D. Daurenbekov, T. Alibay, B. Sadykova, B. Yussupbekova, D. Tolekov\",\"doi\":\"10.32523/ejpfm.2021050308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mechanism of creation of electron-hole trapping centers in CaSO4 at 15-300 K was investigated by the methods of vacuum-ultraviolet and thermoactivation spectroscopy. It is shown that electron-hole trapping centers are formed upon trap of electrons in the anionic complexes SO4− and localization of holes in the form of SO4− radical. Based on the measurement of the spectrum of excitation of long-wavelength recombination emission at 3.0-3.1 eV and 2.7 eV, the energy distance of the formed electron-hole trapping centers was estimated (4.43 eV and 3.87 eV).\",\"PeriodicalId\":36047,\"journal\":{\"name\":\"Eurasian Journal of Physics and Functional Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Eurasian Journal of Physics and Functional Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.32523/ejpfm.2021050308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Physics and Astronomy\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Eurasian Journal of Physics and Functional Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.32523/ejpfm.2021050308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Physics and Astronomy","Score":null,"Total":0}
Mechanisms for the creation of intrinsic electron-hole trapping centers in a CaSO4 crystall
The mechanism of creation of electron-hole trapping centers in CaSO4 at 15-300 K was investigated by the methods of vacuum-ultraviolet and thermoactivation spectroscopy. It is shown that electron-hole trapping centers are formed upon trap of electrons in the anionic complexes SO4− and localization of holes in the form of SO4− radical. Based on the measurement of the spectrum of excitation of long-wavelength recombination emission at 3.0-3.1 eV and 2.7 eV, the energy distance of the formed electron-hole trapping centers was estimated (4.43 eV and 3.87 eV).
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