O. Poluboiarov, O. Chugai, S. Oliinyk, D. Sliusar, S. Sulima
{"title":"低剂量率电离辐射对CdZnTe晶体复介电常数的影响","authors":"O. Poluboiarov, O. Chugai, S. Oliinyk, D. Sliusar, S. Sulima","doi":"10.3952/physics.2023.63.1.5","DOIUrl":null,"url":null,"abstract":"For the first time, the change in the real and imaginary parts of Cd1–xZnxTe crystals complex dielectric permittivity when exposed to ionizing radiation with a small exposure dose rate (about hundreds of μR/h) has been studied. Significant changes in the values of both parts of complex dielectric permittivity have been revealed. Regularities of specified changes have been established and explained taking into account a different radiation effect on free and bound charges. The basis of effect is the changes in the charge carrier localized states of point defect associates. Their appearance is due to a high concentration and a variety of intrinsic structural defects in the studied crystals as a consequence of the deviation of the crystal composition from the stoichiometric one.","PeriodicalId":18144,"journal":{"name":"Lithuanian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.3000,"publicationDate":"2023-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of low-dose-rate ionizing radiation on the complex dielectric permittivity of CdZnTe crystals\",\"authors\":\"O. Poluboiarov, O. Chugai, S. Oliinyk, D. Sliusar, S. Sulima\",\"doi\":\"10.3952/physics.2023.63.1.5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, the change in the real and imaginary parts of Cd1–xZnxTe crystals complex dielectric permittivity when exposed to ionizing radiation with a small exposure dose rate (about hundreds of μR/h) has been studied. Significant changes in the values of both parts of complex dielectric permittivity have been revealed. Regularities of specified changes have been established and explained taking into account a different radiation effect on free and bound charges. The basis of effect is the changes in the charge carrier localized states of point defect associates. Their appearance is due to a high concentration and a variety of intrinsic structural defects in the studied crystals as a consequence of the deviation of the crystal composition from the stoichiometric one.\",\"PeriodicalId\":18144,\"journal\":{\"name\":\"Lithuanian Journal of Physics\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.3000,\"publicationDate\":\"2023-04-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Lithuanian Journal of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.3952/physics.2023.63.1.5\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Lithuanian Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.3952/physics.2023.63.1.5","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Effect of low-dose-rate ionizing radiation on the complex dielectric permittivity of CdZnTe crystals
For the first time, the change in the real and imaginary parts of Cd1–xZnxTe crystals complex dielectric permittivity when exposed to ionizing radiation with a small exposure dose rate (about hundreds of μR/h) has been studied. Significant changes in the values of both parts of complex dielectric permittivity have been revealed. Regularities of specified changes have been established and explained taking into account a different radiation effect on free and bound charges. The basis of effect is the changes in the charge carrier localized states of point defect associates. Their appearance is due to a high concentration and a variety of intrinsic structural defects in the studied crystals as a consequence of the deviation of the crystal composition from the stoichiometric one.
期刊介绍:
The main aim of the Lithuanian Journal of Physics is to reflect the most recent advances in various fields of theoretical, experimental, and applied physics, including: mathematical and computational physics; subatomic physics; atoms and molecules; chemical physics; electrodynamics and wave processes; nonlinear and coherent optics; spectroscopy.