退火对EB-PVD沉积硅薄膜性能的影响

میثم زرچی, شاهرخ آهنگرانی
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引用次数: 0

摘要

本文研究了用电子束物理气相沉积法在硅片上制备的多晶硅薄膜的结构和光学性能。这些膜最初是无定形的,在退火过程中转变为结晶固相。退火在惰性气体气氛的管式炉中在不同温度下进行。分析了薄膜的微观结构,了解了薄膜的结晶/非晶成分、晶粒尺寸和特性之间的关系。结果表明,随着退火温度和结构密度的增加,粗糙度降低。此外,显微拉曼光谱的结果表明,当涂层的厚度由于结构缺陷而增加时,在退火条件下硅纳米晶体的形成和增加
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The Role of Annealing on Properties of Silicon Films Deposited By EB-PVD
: The structural and optical properties of polycrystalline silicon films obtained on a silicon wafer by electron beam physical vapor deposition (EBPVD), were studied in this paper. These films were initially amorphous and changed to a crystalline solid phase during annealing. Annealing was performed in an inert gas atmosphere tube furnace at different temperatures. Micro-structure of the films was analyzed to know the relationship between the crystalline / amorphous composition, grain size and characteristics of the films. The results showed a decrease in roughness with increasing annealing temperature and structural density. Moreover, results of Micro-Raman spectrum showed formation and increase of silicon nanocrystals in the annealed condition when the thickness of the coating increased due to structural defects
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