LaCl3浓度对化学镀液沉积LaF3/多孔硅结构导电机理影响的研究

Md. Hafijur Rahman, A. Ismail
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引用次数: 0

摘要

摘要本文研究了LaCl3浓度对LaF3/多孔硅(PS)结构导电机理的影响。采用一种新的化学浴沉积技术(CBD)沉积了LaF3层。通过这种简单的技术,LaF3被制成LaCl3,在多孔硅衬底上与氢氟酸(HF)反应。这使得LaF3可以直接沉积在多孔硅的孔壁上,从而成功地钝化了PS。沉积的LaF3的成分通过x射线能量色散(EDX)分析得到了证实。用阻抗分析仪(HP4294A)进行了电导率研究。从本研究可以得出电导率随LaCl3浓度的增加而增加,但浓度越高电导率越低的结论。
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Investigation on the influence of LaCl3 concentration on the electrical conduction mechanism of chemical-bath deposited LaF3/porous-silicon structure
Abstract Effect of LaCl3 concentration on the electrical conduction mechanism of LaF3/porous silicon (PS) structure has been investigated in this work. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique, LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the porous silicon leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by Energy Dispersive of X-ray (EDX) analysis. The electrical conduction study has been done by impedance analyzer (HP4294A). From this study it can be concluded that the conductance increases with LaCl3 concentration but decreases for higher concentration.
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Cogent Physics
Cogent Physics PHYSICS, MULTIDISCIPLINARY-
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