氮离子注入对聚四氟乙烯表面电荷积累和耗散的影响

Q4 Engineering 强激光与粒子束 Pub Date : 2020-06-24 DOI:10.11884/HPLPB202032.200045
Liu Chang, Song Fa-lun, Zhu Mingdong, Li Chun-xia, Zhang Bei-zhen, Li Fei, Wang Gan-ping, Gong Haitao, Gan Yan-qing, Jin Xiao
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引用次数: 0

摘要

为了抑制聚四氟乙烯(PTFE)材料表面电荷的积累,采用射频氮等离子体对聚四氟乙烯(PTFE)材料表面进行等离子体浸泡离子注入(PIII),改善其表面性能。采用x射线光电子能谱(XPS)、傅里叶变换红外光谱(FTIR)、水接触角测量、表面电阻率测量、表面电位衰减测量等方法对注入前后的PTFE材料样品进行分析,分析离子注入处理后PTFE样品表面成分和物理性能的变化。基于等温表面电位衰减理论,计算了表面陷阱的能级和密度分布。结果表明,氮离子注入后,PTFE材料表面化学成分的主要变化是其自身分子结构的破坏和转化,部分CF2结构转变为CF和CF3结构,导致样品表面的陷阱层变浅。结果还表明,水接触角上升到140°左右,比未处理样品高27°左右。表面电阻率降至3×1015 Ω,比未处理样品低2个数量级。表面电晕放电1 min后,氮离子注入处理的PTFE材料表面累积电荷量减少,耗散速率增加。这是因为较低的表面陷阱水平有利于表面电荷的捕获,而表面电阻率的降低也促进了表面电荷沿表面的耗散过程。聚四氟乙烯样品表面的阱位分布曲线也证实了这一点。
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Influence of nitrogen ion implantation on surface charge accumulation and dissipation of polytetrafluoroethylene
To suppress the accumulation of charge on the surface of polytetrafluoroethylene (PTFE) material, radio frequency nitrogen plasma was generated to perform plasma immersion ion implantation (PIII) on the PTFE surface to improve its surface properties. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), water contact angle measurement, surface resistivity measurement and surface potential attenuation measurement were performed on the samples of PTFE material before and after injection to analyze the changes in surface composition and physical properties of PTFE samples after ion implantation treatment. Based on the theory of isothermal surface potential attenuation, the energy levels and density distributions of the surface traps were calculated. The results show that after nitrogen ion implantation, the main change in the chemical composition of the surface of the PTFE material is the destruction and conversion of its own molecular structure, and part of the CF2 structure is transformed into the CF and CF3 structures, resulting in shallower trap levels on the sample surface. The results also show that the water contact angle rose to about 140°, which is about 27° higher than that of the unprocessed sample. The surface resistivity drops to 3×1015 Ω, which is two orders of magnitude lower than that of the unprocessed samples. After 1 min of corona discharge on the surface, the amount of accumulated charge on the surface of the PTFE material processed with nitrogen ion implantation decreased, and the rate of dissipation increased. This is because the lower surface trap level is conducive to surface charge trapping, and the reduction in surface resistivity also promotes the dissipation process of surface charge along the surface. The curve of trap level distribution on the surface of PTFE sample also confirmed this.
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来源期刊
强激光与粒子束
强激光与粒子束 Engineering-Electrical and Electronic Engineering
CiteScore
0.90
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11289
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