双组分复合靶的反应磁控溅射模型

H. Doan, D. Golosov, J. Zhang, S. Zavadski, S. Melnikov, T. D. Nguyen
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引用次数: 0

摘要

本文提出了一种预测双组分复合靶在Ar/O2混合气体中反应磁控溅射沉积的复合氧化膜中金属成分含量的模型。该模型考虑了溅射金属及其氧化物的溅射率、离子电子发射系数、靶材上离子电流密度的分布以及这些金属氧化物形成的化学反应速率。为了验证所提出的模型,对Ti-Al复合靶在Ar和Ar/O2混合气体中磁控溅射沉积的钛铝氧化膜的元素组成进行了研究。结果表明,该模型能很好地描述沉积膜中金属含量随腔室氧气流量变化的变化。模拟误差不超过10%,可用于双组分复合靶反应溅射过程中薄膜中金属含量的预测。
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Model of Reactive Magnetron Sputtering of a Two-Component Composite Target
The article proposes a model for predicting the content of metal components of complex oxide films deposited by reactive magnetron sputtering of a two-component composite target in Ar/O2 gas mixture. The model takes into account the sputtering yield and ion-electron emission coefficients of the sputtered metals and their oxides, the distribution of the ion current density on the target, and the rate of the chemical reaction of the formation of oxides of these metals. To verify the proposed model, studies of the elemental composition of titanium-aluminum oxide films deposited by magnetron sputtering of a Ti-Al composite target in Ar and Ar/O2 gas mixture were carried out. It has been established that the model adequately describes the change in the content of metals in the deposited films with a change in the oxygen flow into the chamber. The simulation error does not exceed 10 %, this makes it possible to use the proposed model for predicting the content of metals in a film during reactive sputtering of two-component composite targets.
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发文量
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审稿时长
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