{"title":"射频磁控溅射法制备CdSe和Te掺杂CdSe薄膜的霍尔效应和直流电导率研究","authors":"Devendra Kumar , Chiranji Lal , Dharm Veer , Deshraj Singh , Pawan Kumar , Ram S. Katiyar","doi":"10.1016/j.mlblux.2023.100204","DOIUrl":null,"url":null,"abstract":"<div><p>CdSe and CdSe:Te thin films were grown on Si p-type substrates by RF magnetron sputtering method. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The results show that after the doping of Te in the CdSe thin film, the conductivity changes from n-type to p-type and the mobility of the CdSe thin film increased. The conductivity of Te doped CdSe was found to be in order of 10<sup>−6</sup> Ω<sup>−1</sup> cm<sup>−1</sup>, while without doping it was 10<sup>−5</sup> Ω<sup>−1</sup> cm<sup>−1</sup>. X-ray diffraction (XRD) confirmed the presence of CdSe, Te and Si.</p></div>","PeriodicalId":18245,"journal":{"name":"Materials Letters: X","volume":"18 ","pages":"Article 100204"},"PeriodicalIF":2.2000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study the hall effect and DC conductivity of CdSe and Te doped CdSe thin films prepared by RF magnetron sputtering method\",\"authors\":\"Devendra Kumar , Chiranji Lal , Dharm Veer , Deshraj Singh , Pawan Kumar , Ram S. Katiyar\",\"doi\":\"10.1016/j.mlblux.2023.100204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>CdSe and CdSe:Te thin films were grown on Si p-type substrates by RF magnetron sputtering method. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The results show that after the doping of Te in the CdSe thin film, the conductivity changes from n-type to p-type and the mobility of the CdSe thin film increased. The conductivity of Te doped CdSe was found to be in order of 10<sup>−6</sup> Ω<sup>−1</sup> cm<sup>−1</sup>, while without doping it was 10<sup>−5</sup> Ω<sup>−1</sup> cm<sup>−1</sup>. X-ray diffraction (XRD) confirmed the presence of CdSe, Te and Si.</p></div>\",\"PeriodicalId\":18245,\"journal\":{\"name\":\"Materials Letters: X\",\"volume\":\"18 \",\"pages\":\"Article 100204\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2023-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Letters: X\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2590150823000248\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters: X","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590150823000248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Study the hall effect and DC conductivity of CdSe and Te doped CdSe thin films prepared by RF magnetron sputtering method
CdSe and CdSe:Te thin films were grown on Si p-type substrates by RF magnetron sputtering method. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The results show that after the doping of Te in the CdSe thin film, the conductivity changes from n-type to p-type and the mobility of the CdSe thin film increased. The conductivity of Te doped CdSe was found to be in order of 10−6 Ω−1 cm−1, while without doping it was 10−5 Ω−1 cm−1. X-ray diffraction (XRD) confirmed the presence of CdSe, Te and Si.
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