{"title":"利用光反射光谱研究GaBiAs薄膜带隙上和带隙下的光学跃迁","authors":"Ömer Dönmez, A. Erol","doi":"10.3906/fiz-2003-17","DOIUrl":null,"url":null,"abstract":"We present optical identification of deep level defects in as-grown and annealed GaBixAs1−x (x = 0, 0.013 and 0.015) alloys grown at different temperatures (220 °C and 320 °C) by using photo-modulated reflectance (PR) spectroscopy and photoluminescence (PL). The PR measurements are employed at aboveand below-bandgap excitations, and the PR line-shape is analyzed by the third derivative functional form (TDFF). The PR at below-bandgap excitation reveals transitions at 0.757 ±0.001 eV and 0.710 ±0.002 eV at 30K and 300K, respectively. Franz-Keldysh oscillations are observed in all samples under above-bandgap excitation at PR measurements, and the built-in electric field, which may originate from the charged As-antisite defects is calculated from local extrema points in the PR spectra. The decrease in the built-in electric field after thermal annealing is explained with decreased point defect density.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2020-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.3906/fiz-2003-17","citationCount":"1","resultStr":"{\"title\":\"Investigating above-bandgap and below-bandgap optical transition in GaBiAs epilayers by photoreflectance spectroscopy\",\"authors\":\"Ömer Dönmez, A. Erol\",\"doi\":\"10.3906/fiz-2003-17\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present optical identification of deep level defects in as-grown and annealed GaBixAs1−x (x = 0, 0.013 and 0.015) alloys grown at different temperatures (220 °C and 320 °C) by using photo-modulated reflectance (PR) spectroscopy and photoluminescence (PL). The PR measurements are employed at aboveand below-bandgap excitations, and the PR line-shape is analyzed by the third derivative functional form (TDFF). The PR at below-bandgap excitation reveals transitions at 0.757 ±0.001 eV and 0.710 ±0.002 eV at 30K and 300K, respectively. Franz-Keldysh oscillations are observed in all samples under above-bandgap excitation at PR measurements, and the built-in electric field, which may originate from the charged As-antisite defects is calculated from local extrema points in the PR spectra. The decrease in the built-in electric field after thermal annealing is explained with decreased point defect density.\",\"PeriodicalId\":46003,\"journal\":{\"name\":\"Turkish Journal of Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2020-08-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.3906/fiz-2003-17\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Turkish Journal of Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3906/fiz-2003-17\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Turkish Journal of Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3906/fiz-2003-17","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Investigating above-bandgap and below-bandgap optical transition in GaBiAs epilayers by photoreflectance spectroscopy
We present optical identification of deep level defects in as-grown and annealed GaBixAs1−x (x = 0, 0.013 and 0.015) alloys grown at different temperatures (220 °C and 320 °C) by using photo-modulated reflectance (PR) spectroscopy and photoluminescence (PL). The PR measurements are employed at aboveand below-bandgap excitations, and the PR line-shape is analyzed by the third derivative functional form (TDFF). The PR at below-bandgap excitation reveals transitions at 0.757 ±0.001 eV and 0.710 ±0.002 eV at 30K and 300K, respectively. Franz-Keldysh oscillations are observed in all samples under above-bandgap excitation at PR measurements, and the built-in electric field, which may originate from the charged As-antisite defects is calculated from local extrema points in the PR spectra. The decrease in the built-in electric field after thermal annealing is explained with decreased point defect density.
期刊介绍：
The Turkish Journal of Physics is published electronically 6 times a year by the Scientific and Technological Research Council of Turkey (TÜBİTAK) and accepts English-language manuscripts in various fields of research in physics, astrophysics, and interdisciplinary topics related to physics. Contribution is open to researchers of all nationalities.
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