直接激光干涉图案化与多边形扫描技术相结合的聚苯乙烯高通量激光表面微结构

IF 2.2 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Letters: X Pub Date : 2022-06-01 DOI:10.1016/j.mlblux.2022.100144
Fabian Ränke , Robert Baumann , Bogdan Voisiat , Andrés Fabián Lasagni
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引用次数: 6

摘要

基于激光的加工技术已被证明是修饰聚合物表面的有效选择。在这种情况下,直接激光干涉图像化与多边形扫描技术相结合,通过超高速光束偏转来制造有纹理的聚苯乙烯表面。这是通过使用高平均功率皮秒激光与基于多边形反射镜的扫描系统相结合来实现的。双光束DLIP光学结构可形成空间周期为21.0µm的线状结构。研究了扫描速度和重复频率对结构形成的影响,允许结构高度达到23µm。微观结构的形成是由膨胀和烧蚀机制引起的。采用350 m/s的扫描速度,首次报道了1.1 m2/min的吞吐量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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High throughput laser surface micro-structuring of polystyrene by combining direct laser interference patterning with polygon scanner technology

Laser-based processing techniques have proven to be an effective option of modifying polymer surfaces. In this context Direct Laser Interference Patterning in conjunction with the polygon scanner technique is used to fabricate textured polystyrene surfaces through ultra-fast beam deflection. This is achieved by using a high-average power picosecond laser in combination with a polygon mirror-based scanning system. The two-beam DLIP optical configuration leads to the formation of line-like structures with a spatial period of 21.0 µm. The influence of the scanning speed and the repetition rate on the structure formation is investigated, allowing structure heights up to 23 µm. The formation of the micro-structure was found to result from swelling and ablation mechanisms. By applying scanning speeds of 350 m/s, a throughput of 1.1 m2/min is reported for the first time using this method.

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来源期刊
CiteScore
3.10
自引率
0.00%
发文量
50
审稿时长
114 days
期刊最新文献
Large-area solution-processable black phosphorus for electronic application Composites with aligned and plasma-surface-modified graphene nanoplatelets and high dielectric constants CVD grown bi-layer MoS2 as SERS substrate: Nanomolar detection of R6G and temperature response Editorial Board Corrigendum to “High throughput laser surface micro-structuring of polystyrene by combining direct laser interference patterning with polygon scanner technology” [Mater. Lett.: X 14 (2022) 100144]
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