{"title":"单层石墨烯带在宽温度范围内的电学特性","authors":"Rachid Fates, R. Remmouche, T. Benkedidah","doi":"10.5755/j02.ms.33700","DOIUrl":null,"url":null,"abstract":"This paper provides electrical characterization of single layer graphene ribbon devices defined as back-gated graphene transistors. The two-terminal back-gated graphene ribbon devices were fabricated on a conventional Si substrate covered by a 90 nm-thick thermal SiO2. The chemical vapor deposition process was used for the graphene layer deposition and its quality was checked with optical microscopy, scanning electron microscopy and Raman spectroscopy. For the device fabrication, optical lithography was used for electrode patterns through a mask, and Ti/Au (10 nm/100 nm) metallic contacts were deposited by thermal evaporation. We report low and high field electrical measurements of several devices, under a controlled environment over a wide temperature range, from 77 to 300 K. At 77 K, the drain current decreases, i.e. the resistance of the graphene increases, and the nonlinearity is still present. The maximum influence of the temperature is reached at the charges neutrality point, and we observe that the temperature could influence the position of the charge neutrality point. This indicates that the carriers are thermally activated, which yields a least pronounced current with the increase of the back gate voltage.","PeriodicalId":49875,"journal":{"name":"Materials Science-Poland","volume":" ","pages":""},"PeriodicalIF":1.1000,"publicationDate":"2023-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical Characteristics of Single Layer Graphene Ribbons in a Wide Temperature Range\",\"authors\":\"Rachid Fates, R. Remmouche, T. Benkedidah\",\"doi\":\"10.5755/j02.ms.33700\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provides electrical characterization of single layer graphene ribbon devices defined as back-gated graphene transistors. The two-terminal back-gated graphene ribbon devices were fabricated on a conventional Si substrate covered by a 90 nm-thick thermal SiO2. The chemical vapor deposition process was used for the graphene layer deposition and its quality was checked with optical microscopy, scanning electron microscopy and Raman spectroscopy. For the device fabrication, optical lithography was used for electrode patterns through a mask, and Ti/Au (10 nm/100 nm) metallic contacts were deposited by thermal evaporation. We report low and high field electrical measurements of several devices, under a controlled environment over a wide temperature range, from 77 to 300 K. At 77 K, the drain current decreases, i.e. the resistance of the graphene increases, and the nonlinearity is still present. The maximum influence of the temperature is reached at the charges neutrality point, and we observe that the temperature could influence the position of the charge neutrality point. This indicates that the carriers are thermally activated, which yields a least pronounced current with the increase of the back gate voltage.\",\"PeriodicalId\":49875,\"journal\":{\"name\":\"Materials Science-Poland\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2023-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science-Poland\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.5755/j02.ms.33700\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science-Poland","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.5755/j02.ms.33700","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
Electrical Characteristics of Single Layer Graphene Ribbons in a Wide Temperature Range
This paper provides electrical characterization of single layer graphene ribbon devices defined as back-gated graphene transistors. The two-terminal back-gated graphene ribbon devices were fabricated on a conventional Si substrate covered by a 90 nm-thick thermal SiO2. The chemical vapor deposition process was used for the graphene layer deposition and its quality was checked with optical microscopy, scanning electron microscopy and Raman spectroscopy. For the device fabrication, optical lithography was used for electrode patterns through a mask, and Ti/Au (10 nm/100 nm) metallic contacts were deposited by thermal evaporation. We report low and high field electrical measurements of several devices, under a controlled environment over a wide temperature range, from 77 to 300 K. At 77 K, the drain current decreases, i.e. the resistance of the graphene increases, and the nonlinearity is still present. The maximum influence of the temperature is reached at the charges neutrality point, and we observe that the temperature could influence the position of the charge neutrality point. This indicates that the carriers are thermally activated, which yields a least pronounced current with the increase of the back gate voltage.
期刊介绍:
Material Sciences-Poland is an interdisciplinary journal devoted to experimental research into results on the relationships between structure, processing, properties, technology, and uses of materials. Original research articles and review can be only submitted.