{"title":"多原子共振x射线拉曼散射的角依赖性","authors":"J. Kogo, Ryusaku Sato, K. Niki, K. Asakura","doi":"10.1380/ejssnt.2022-033","DOIUrl":null,"url":null,"abstract":"We study the polarization dependence of the structure factor in 9 multi-atom resonant X-ray Raman (MARX-Raman) scattering. 10 The calculations for the GaN (C3v) and SnO2 (C2v) show some 11 preferable structures to enhance the MARX-Raman signal inten12 sity through the structure factor which depends on the relative 13 arrangement of the incident X-ray polarization and the sur14 rounding local atomic geometry. The theoretical calculations 15 help us to derive new information from the MARX-Raman. 16","PeriodicalId":11626,"journal":{"name":"E-journal of Surface Science and Nanotechnology","volume":" ","pages":""},"PeriodicalIF":0.5000,"publicationDate":"2022-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Angular Dependence of Multi-atom Resonant X-ray Raman Scattering\",\"authors\":\"J. Kogo, Ryusaku Sato, K. Niki, K. Asakura\",\"doi\":\"10.1380/ejssnt.2022-033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study the polarization dependence of the structure factor in 9 multi-atom resonant X-ray Raman (MARX-Raman) scattering. 10 The calculations for the GaN (C3v) and SnO2 (C2v) show some 11 preferable structures to enhance the MARX-Raman signal inten12 sity through the structure factor which depends on the relative 13 arrangement of the incident X-ray polarization and the sur14 rounding local atomic geometry. The theoretical calculations 15 help us to derive new information from the MARX-Raman. 16\",\"PeriodicalId\":11626,\"journal\":{\"name\":\"E-journal of Surface Science and Nanotechnology\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2022-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"E-journal of Surface Science and Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1380/ejssnt.2022-033\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"E-journal of Surface Science and Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1380/ejssnt.2022-033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
Angular Dependence of Multi-atom Resonant X-ray Raman Scattering
We study the polarization dependence of the structure factor in 9 multi-atom resonant X-ray Raman (MARX-Raman) scattering. 10 The calculations for the GaN (C3v) and SnO2 (C2v) show some 11 preferable structures to enhance the MARX-Raman signal inten12 sity through the structure factor which depends on the relative 13 arrangement of the incident X-ray polarization and the sur14 rounding local atomic geometry. The theoretical calculations 15 help us to derive new information from the MARX-Raman. 16
期刊介绍:
Our completely electronic and open-access journal aims at quick and versatile-style publication of research papers on fundamental theory and experiments at frontiers of science and technology relating to surfaces, interfaces, thin films, fine particles, nanowires, nanotubes, and other nanometer-scale structures, and their interdisciplinary areas such as crystal growth, vacuum technology, and so on. It covers their physics, chemistry, biology, materials science, and their applications to advanced technology for computations, communications, memory, catalysis, sensors, biological and medical purposes, energy and environmental problems, and so on.