{"title":"基于CNFET MCML拓扑结构的新型功率维持3位异步计数器设计","authors":"Ramsha Suhail, Pragya Srivastava, Richa Yadav, Richa Srivastava","doi":"10.15598/aeee.v20i3.4279","DOIUrl":null,"url":null,"abstract":". Leading digital circuits namely register, flipflops, state machines and counters drive operational aspects and potential applications in Integrated Circuit (IC) industry. based implementations with rapid response and simul-taneous generation of complemented output is all set to become indispensable in nano regime industry. This paper attempts to optimize and address performance-based analysis of digital circuits namely NAND, D flipflop and 3-bit asynchronous counter by practicing MCML based implementation. These circuits are con-templated on four design parameters namely delay ( t p ), power (pwr), Power Delay Product (PDP) and Energy Delay Product (EDP). This research focuses on relative analysis and emanate a salient optimal application of Complementary Metal-Oxide-Semiconductor (CMOS) and Carbon Nanotube Field Effect Transistor (CNFET) based 3-bit asynchronous counter. In ad-dition to this, the two configurations of the MCML counter are then compared against applied V DD at 16-nm technology nodes using HSPICE simulator. CNFET based 3-bit MCML counter is observed to be much faster (9.75 × ), significant improvement in gross power dissipation (11.93 × ), material refinement in PDP and EDP (116.39 × and 1165 × ) re-spectively as compared to the conventional counterpart. Therefore, CNFET based implementations comes to the fore as resilient technology supporting high level integration in nano scale regime.","PeriodicalId":7268,"journal":{"name":"Advances in Electrical and Electronic Engineering","volume":null,"pages":null},"PeriodicalIF":0.5000,"publicationDate":"2022-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Neoteric Design Power Sustained 3-Bit Asynchronous Counter Using CNFET Based MCML Topology\",\"authors\":\"Ramsha Suhail, Pragya Srivastava, Richa Yadav, Richa Srivastava\",\"doi\":\"10.15598/aeee.v20i3.4279\",\"DOIUrl\":null,\"url\":null,\"abstract\":\". Leading digital circuits namely register, flipflops, state machines and counters drive operational aspects and potential applications in Integrated Circuit (IC) industry. based implementations with rapid response and simul-taneous generation of complemented output is all set to become indispensable in nano regime industry. This paper attempts to optimize and address performance-based analysis of digital circuits namely NAND, D flipflop and 3-bit asynchronous counter by practicing MCML based implementation. These circuits are con-templated on four design parameters namely delay ( t p ), power (pwr), Power Delay Product (PDP) and Energy Delay Product (EDP). This research focuses on relative analysis and emanate a salient optimal application of Complementary Metal-Oxide-Semiconductor (CMOS) and Carbon Nanotube Field Effect Transistor (CNFET) based 3-bit asynchronous counter. In ad-dition to this, the two configurations of the MCML counter are then compared against applied V DD at 16-nm technology nodes using HSPICE simulator. CNFET based 3-bit MCML counter is observed to be much faster (9.75 × ), significant improvement in gross power dissipation (11.93 × ), material refinement in PDP and EDP (116.39 × and 1165 × ) re-spectively as compared to the conventional counterpart. Therefore, CNFET based implementations comes to the fore as resilient technology supporting high level integration in nano scale regime.\",\"PeriodicalId\":7268,\"journal\":{\"name\":\"Advances in Electrical and Electronic Engineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2022-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Electrical and Electronic Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15598/aeee.v20i3.4279\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Electrical and Electronic Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15598/aeee.v20i3.4279","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Neoteric Design Power Sustained 3-Bit Asynchronous Counter Using CNFET Based MCML Topology
. Leading digital circuits namely register, flipflops, state machines and counters drive operational aspects and potential applications in Integrated Circuit (IC) industry. based implementations with rapid response and simul-taneous generation of complemented output is all set to become indispensable in nano regime industry. This paper attempts to optimize and address performance-based analysis of digital circuits namely NAND, D flipflop and 3-bit asynchronous counter by practicing MCML based implementation. These circuits are con-templated on four design parameters namely delay ( t p ), power (pwr), Power Delay Product (PDP) and Energy Delay Product (EDP). This research focuses on relative analysis and emanate a salient optimal application of Complementary Metal-Oxide-Semiconductor (CMOS) and Carbon Nanotube Field Effect Transistor (CNFET) based 3-bit asynchronous counter. In ad-dition to this, the two configurations of the MCML counter are then compared against applied V DD at 16-nm technology nodes using HSPICE simulator. CNFET based 3-bit MCML counter is observed to be much faster (9.75 × ), significant improvement in gross power dissipation (11.93 × ), material refinement in PDP and EDP (116.39 × and 1165 × ) re-spectively as compared to the conventional counterpart. Therefore, CNFET based implementations comes to the fore as resilient technology supporting high level integration in nano scale regime.