WSe2的p掺杂使二维材料可印刷电子器件的电荷转移成为可能

IF 3.7 3区工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Information Display Pub Date : 2023-04-27 DOI:10.1080/15980316.2023.2204205

Taoyu Zou, Haksoon Jung, A. Liu, Soo-Kwan Kim, Youjin Reo, Taesu Choi, Yong‐Young Noh

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引用次数: 2

摘要

在这里，我们报告了通过掺杂p型FeCl3分子制备高性能可打印WSe2晶体管(空穴迁移率:~ 1.5 cm2 V−1 s−1;开/关比:~ 106)。利用p-WSe2和n-MoS2晶体管演示了互补逆变器，这突出了其在未来二维材料基可印刷电子器件中的应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Charge transfer enabled by the p-doping of WSe2 for 2D material-based printable electronics

Here, we report the fabrication of high-performance printable WSe2 transistors via the doping of p-type FeCl3 molecules (hole mobility: ∼1.5 cm2 V−1 s−1; on/off ratio: ∼106). A complementary inverter is demonstrated with p-WSe2 and n-MoS2 transistors, which highlights its potential for application in future two-dimensional material-based printable electronics.

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