p-i-n-GaAs太阳能电池性能的数值模拟

IF 1 4区材料科学 Journal of Ovonic Research Pub Date : 2022-11-30 DOI:10.15251/jor.2022.186.769

E. Chahid

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引用次数: 0

摘要

本研究旨在提高和评估p-i-n-GaAs太阳能电池的外量子效率。利用有限差分法计算了少数载流子的电流密度以及几何和物理单元参数。因此，EQE模拟结果与实验数据非常接近，最大EQE为57.26%，p、i和n的最佳层厚（µm）分别为0.2、1、4，n和p层掺杂（cm-3）分别为1020 cm-3和4×1017 cm-3。p+-AlGaAs窗口层的加入使能量转换效率（%）从19.41提高到25.45。

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Numerical modeling of p-i-n GaAs solar cell performance

This study aims to improve and evaluate the external quantum efficiency (EQE) of p-i-n GaAs solar cells. The current densities of minority carriers and the geometrical and physical cell parameters were calculated using the finite difference method. As a result, the EQE simulation findings are extremely close to the experimental data, and a maximum EQE of 57.26 %, with optimum layer thicknesses (µm) of p, i, and n are respectively 0.2,1,4, and n and p layers doping (cm-3 ) of 1020 cm-3 and 4 × 1017 cm-3 . The adding of p+-AlGaAs window layer increases the energy conversion efficiency (%) from 19.41 to 25.45.

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.