双电荷阱对KCl中TL发射的适用性

Q3 Multidisciplinary Malaysian journal of science Pub Date : 2021-02-28 DOI:10.22452/MJS.VOL40NO1.4

R. Pandey, S. D. Pandey, Sumit Kumar, Rajendra Kumar

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引用次数: 0

摘要

在KCl晶体中，阴离子-阳离子空位对中f中心的2s能级被提出作为热释光(TL)发射的合适陷阱。进一步发现，位于正阴离子空位对中的f中心的2s能级具有较大的陷阱深度。观察到的f中心陷阱深度可以用Herman和Barnett模型来解释，该模型目前得到了修正，并支持KCl晶格中陷阱的双空位构型。

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SUITABILITY OF BI-VACANCY TRAP FOR TL EMISSION IN KCl

In KCl crystals, the 2s energy level of F-center within an anion-cation vacancy pair has been proposed as a suitable trap for thermoluminescence (TL) emission. It is further seen that the 2s – level of F-center situated in cation – anion vacancy pair has large trap depth. The observed trap depth of F-center is explainable on the basis of Herman and Barnett model, modified presently and supports bi-vacancy configuration for traps in KCl lattice.

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Malaysian journal of science Multidisciplinary-Multidisciplinary

CiteScore

1.10

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0.00%

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