通过调节纳米结构多孔硅层的结构特性优化扩展栅场效应晶体管(EGFET)pH传感器的性能

Q2 Physics and Astronomy Journal of Theoretical and Applied Physics Pub Date : 2021-02-03 DOI:10.1007/s40094-020-00403-3
A. Alwan, M. Zayer, A. A. Jabbar, A. Dheyab
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Optimizing the performance of extended-gate field-effect transistor (EGFET) pH sensor by regulating the structural properties of the nanostructured porous silicon layer
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期刊介绍: Journal of Theoretical and Applied Physics offers an exciting publication outlet for novel and frontier physics. It encourages the submission of new research on: condensed matter physics, theoretical physics, nonlinear science, statistical physics, mathematical and computational physics, general and cross-disciplinary physics (including foundations), atomic, molecular and cluster physics, plasma and fluid physics, optical physics, biological physics, nanoscience, laser and photonics, high energy and nuclear Physics. The journal''s high standard and wide dissemination ensures a broad readership amongst the physics community. Rapid publication times and flexible length restrictions give Journal of Theoretical and Applied Physics the edge over other journals in the field. Publishing in this journal is completely free of charge.
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