用于基于生物阻抗的物联网医疗设备的全差分CMOS仪器放大器

IF 1.6 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Low Power Electronics and Applications Pub Date : 2022-12-30 DOI:10.3390/jlpea13010003
Israel Corbacho, J. M. Carrillo, J. L. Ausín, M. A. Domínguez, R. Pérez-Aloe, J. F. Duque-Carrillo
{"title":"用于基于生物阻抗的物联网医疗设备的全差分CMOS仪器放大器","authors":"Israel Corbacho, J. M. Carrillo, J. L. Ausín, M. A. Domínguez, R. Pérez-Aloe, J. F. Duque-Carrillo","doi":"10.3390/jlpea13010003","DOIUrl":null,"url":null,"abstract":"The implementation of a fully-differential (FD) instrumentation amplifier (IA), based on indirect current feedback (ICF) and aimed to electrical impedance measurements in an Internet of Things (IoT) biomedical scenario, is presented. The IA consists of two FD transconductors, to process the input signal and feed back the output signal, a summing stage, used to add both contributions and generate the correcting current feedback signal, and a common-mode feedback network, which controls the DC level at the output nodes of the circuit. The transconductors are formed by a voltage-to-current conversion resistor and two voltage buffers, which are based on a super source follower cell in order to improve the overall response of the circuit. As a result, a compact single-stage structure, suitable for achieving a high bandwidth and a low power consumption, is obtained. The FD ICF IA has been designed and fabricated in 180 nm CMOS technology to operate with a 1.8-V supply and provide a nominal gain of 4 V/V. Experimental results show a voltage gain of 3.78 ± 0.06 V/V, a BW of 5.83 MHz, a CMRR at DC around 70 dB, a DC current consumption of 266.4 μA and a silicon area occupation of 0.0304 mm2.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2022-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Fully-Differential CMOS Instrumentation Amplifier for Bioimpedance-Based IoT Medical Devices\",\"authors\":\"Israel Corbacho, J. M. Carrillo, J. L. Ausín, M. A. Domínguez, R. Pérez-Aloe, J. F. Duque-Carrillo\",\"doi\":\"10.3390/jlpea13010003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The implementation of a fully-differential (FD) instrumentation amplifier (IA), based on indirect current feedback (ICF) and aimed to electrical impedance measurements in an Internet of Things (IoT) biomedical scenario, is presented. The IA consists of two FD transconductors, to process the input signal and feed back the output signal, a summing stage, used to add both contributions and generate the correcting current feedback signal, and a common-mode feedback network, which controls the DC level at the output nodes of the circuit. The transconductors are formed by a voltage-to-current conversion resistor and two voltage buffers, which are based on a super source follower cell in order to improve the overall response of the circuit. As a result, a compact single-stage structure, suitable for achieving a high bandwidth and a low power consumption, is obtained. The FD ICF IA has been designed and fabricated in 180 nm CMOS technology to operate with a 1.8-V supply and provide a nominal gain of 4 V/V. Experimental results show a voltage gain of 3.78 ± 0.06 V/V, a BW of 5.83 MHz, a CMRR at DC around 70 dB, a DC current consumption of 266.4 μA and a silicon area occupation of 0.0304 mm2.\",\"PeriodicalId\":38100,\"journal\":{\"name\":\"Journal of Low Power Electronics and Applications\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2022-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Low Power Electronics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3390/jlpea13010003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Low Power Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/jlpea13010003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 3

摘要

介绍了一种基于间接电流反馈(ICF)的全差分(FD)仪器放大器(IA)的实现,该放大器旨在物联网(IoT)生物医学场景中的电阻抗测量。IA由两个FD跨导组成,用于处理输入信号并反馈输出信号,一个求和级,用于相加两个贡献并生成校正电流反馈信号,以及一个共模反馈网络,用于控制电路输出节点处的DC电平。跨导由一个电压-电流转换电阻器和两个电压缓冲器形成,它们基于超级源极跟随器单元,以提高电路的整体响应。结果,获得了适用于实现高带宽和低功耗的紧凑的单级结构。FD ICF IA采用180 nm CMOS技术设计和制造,可在1.8V电源下工作,并提供4 V/V的标称增益。实验结果表明,电压增益为3.78±0.06V/V,带宽为5.83MHz,直流CMRR约为70dB,直流电流消耗为266.4μa,硅面积占用为0.0304mm2。
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A Fully-Differential CMOS Instrumentation Amplifier for Bioimpedance-Based IoT Medical Devices
The implementation of a fully-differential (FD) instrumentation amplifier (IA), based on indirect current feedback (ICF) and aimed to electrical impedance measurements in an Internet of Things (IoT) biomedical scenario, is presented. The IA consists of two FD transconductors, to process the input signal and feed back the output signal, a summing stage, used to add both contributions and generate the correcting current feedback signal, and a common-mode feedback network, which controls the DC level at the output nodes of the circuit. The transconductors are formed by a voltage-to-current conversion resistor and two voltage buffers, which are based on a super source follower cell in order to improve the overall response of the circuit. As a result, a compact single-stage structure, suitable for achieving a high bandwidth and a low power consumption, is obtained. The FD ICF IA has been designed and fabricated in 180 nm CMOS technology to operate with a 1.8-V supply and provide a nominal gain of 4 V/V. Experimental results show a voltage gain of 3.78 ± 0.06 V/V, a BW of 5.83 MHz, a CMRR at DC around 70 dB, a DC current consumption of 266.4 μA and a silicon area occupation of 0.0304 mm2.
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来源期刊
Journal of Low Power Electronics and Applications
Journal of Low Power Electronics and Applications Engineering-Electrical and Electronic Engineering
CiteScore
3.60
自引率
14.30%
发文量
57
审稿时长
11 weeks
期刊最新文献
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