A. Yesayan, S. Petrosyan, A. Papiyan, J.-M. Sallese
{"title":"纳米线离子敏感场效应晶体管的理论研究","authors":"A. Yesayan, S. Petrosyan, A. Papiyan, J.-M. Sallese","doi":"10.3103/S1068337221040071","DOIUrl":null,"url":null,"abstract":"<p>The operation principle of a semiconductor nanowire (NW) ion-sensitive field-effect transistor (ISFET), denoted for pH sensing, is studied within the framework of this work. The physical processes in the system are mathematically modelled and presented in details. The dependences of the NW ISFET current-pH characteristics on NW geometrical and physical parameters are analyzed. The plots of the ISFET sensitivity versus pH at different NW radii, the thicknesses of the oxide layer, and the NW doping densities are presented. The obtained results are in qualitative agreement with the experimental data.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"56 4","pages":"324 - 331"},"PeriodicalIF":0.5000,"publicationDate":"2021-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor\",\"authors\":\"A. Yesayan, S. Petrosyan, A. Papiyan, J.-M. Sallese\",\"doi\":\"10.3103/S1068337221040071\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The operation principle of a semiconductor nanowire (NW) ion-sensitive field-effect transistor (ISFET), denoted for pH sensing, is studied within the framework of this work. The physical processes in the system are mathematically modelled and presented in details. The dependences of the NW ISFET current-pH characteristics on NW geometrical and physical parameters are analyzed. The plots of the ISFET sensitivity versus pH at different NW radii, the thicknesses of the oxide layer, and the NW doping densities are presented. The obtained results are in qualitative agreement with the experimental data.</p>\",\"PeriodicalId\":623,\"journal\":{\"name\":\"Journal of Contemporary Physics (Armenian Academy of Sciences)\",\"volume\":\"56 4\",\"pages\":\"324 - 331\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2021-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Contemporary Physics (Armenian Academy of Sciences)\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.3103/S1068337221040071\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Contemporary Physics (Armenian Academy of Sciences)","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.3103/S1068337221040071","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor
The operation principle of a semiconductor nanowire (NW) ion-sensitive field-effect transistor (ISFET), denoted for pH sensing, is studied within the framework of this work. The physical processes in the system are mathematically modelled and presented in details. The dependences of the NW ISFET current-pH characteristics on NW geometrical and physical parameters are analyzed. The plots of the ISFET sensitivity versus pH at different NW radii, the thicknesses of the oxide layer, and the NW doping densities are presented. The obtained results are in qualitative agreement with the experimental data.
期刊介绍：
Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
